B2VR Search Results
B2VR Price and Stock
Microchip Technology Inc APT6011B2VRG- Rail/Tube (Alt: APT6011B2VRG) |
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APT6011B2VRG | Tube | 20 Weeks | 30 |
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APT6011B2VRG |
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APT6011B2VRG | Bulk | 250 |
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APT6011B2VRG | Tube | 59 | 20 Weeks |
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APT6011B2VRG | 22 Weeks | 1 |
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APT6011B2VRG | 21 Weeks | 1 |
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APT6011B2VRG |
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Microchip Technology Inc APT5010B2VRG- Rail/Tube (Alt: APT5010B2VRG) |
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APT5010B2VRG | Tube | 20 Weeks | 30 |
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APT5010B2VRG | 27 |
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APT5010B2VRG | Bulk | 250 |
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APT5010B2VRG | Tube | 425 | 20 Weeks |
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APT5010B2VRG | 22 Weeks | 1 |
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APT5010B2VRG | 21 Weeks | 1 |
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APT5010B2VRG |
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APT5010B2VRG | 3,919 |
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Microchip Technology Inc APT20M18B2VRGPower MOS V MOSFET N-Channel 200V 100A 3-Pin TO-247 - Rail/Tube (Alt: APT20M18B2VRG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT20M18B2VRG | Tube | 20 Weeks | 30 |
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APT20M18B2VRG |
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APT20M18B2VRG | Bulk | 250 |
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APT20M18B2VRG | Tube | 20 Weeks |
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APT20M18B2VRG |
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Microchip Technology Inc APT8030B2VRGTransistor MOSFET N-Channel 800V 27A 3-Pin TO-247 - Rail/Tube (Alt: APT8030B2VRG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT8030B2VRG | Tube | 20 Weeks | 30 |
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APT8030B2VRG |
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APT8030B2VRG | Bulk | 250 |
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APT8030B2VRG | Tube | 25 | 20 Weeks |
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APT8030B2VRG |
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Carling Technologies RA901-VB-B-2-V (RAV-73005000|RA901-VB-B-2-V|RA901VBB2V)ROCKER SWITCH, SPST, OFF-NONE-ON, RED OFF-ON LEGEND, 16A, 125V, QC, R SERIES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RA901-VB-B-2-V (RAV-73005000|RA901-VB-B-2-V|RA901VBB2V) | Bulk | 185 | 3 Weeks | 1 |
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B2VR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
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apt8024b2vrapt8024lvro-264apt8024b2vfr+1 | |
APT12060LContextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt12060b2vrapt12060lvro-264apt12060+2 | |
APT10050B2VFR
Abstract: APT10050LVFR
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apt10050b2vfrapt10050lvfro-264apt10050+1 | |
diode 132Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt8024b2vrapt8024lvro-264apt8024+2 | |
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Contextual Info: B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt20m18b2vrapt20m18lvro-264apt20m18+1 | |
APT50M85B2VR
Abstract: APT50M85LVR
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apt50m85b2vrapt50m85lvro-264o-247 | |
diode 304
Abstract: 11200-1 B2VR 72 RG
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apt30m40b2vrapt30m40lvro-264apt30m40+5 | |
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Contextual Info: B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt50m85b2vrapt50m85lvro-264apt50m85+1 | |
APT6011B2VRContextual Info: B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt6011b2vrapt6011lvro-264apt6011+1 | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt10040b2vrapt10040lvro-264apt10040+1 | |
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Contextual Info: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt20m18b2vra20m18lvro-264o-247 | |
APT12060B2VR
Abstract: APT12060LVR
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apt12060b2vrapt12060lvro-264apt12060+1 | |
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Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt8024b2vrapt8024lvro-264apt8024+1 | |
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Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt8024b2vrapt8024lvro-264apt8024b2vfr+1 | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt10040b2vrapt10040lvro-264apt10040+1 | |
ED 58AContextual Info: B2VR APT50M80LVR 500V 58A 0.080W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt50m80b2vrapt50m80lvro-264apt50m80+2 | |
050590
Abstract: APT10040B2VR APT10040LVR
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apt10040b2vrapt10040lvro-264apt10040+2 | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt10040b2vrapt10040lvro-264apt10040+1 | |
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Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt6011b2vrapt6011lvro-264o-247 | |
MAX1370
Abstract: APT10M09LVR
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apt10m09b2vrapt10m09lvro-264apt10m09+2 | |
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Contextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt12060b2vrapt12060lvro-264apt12060+1 | |
A20M18LVR
Abstract: APT20M18B2VR
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apt20m18b2vra20m18lvro-264o-247 | |
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Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt8024b2vrapt8024lvro-264apt8024b2vfr+1 | |
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Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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apt6011b2vrapt6011lvro-264o-247 | |