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    Microchip Technology Inc APT6011B2VRG

    - Rail/Tube (Alt: APT6011B2VRG)
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    Avnet Americas APT6011B2VRG Tube 20 Weeks 30
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    Microchip Technology Inc APT6011B2VRG Tube 59 20 Weeks
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    Avnet Silica APT6011B2VRG 22 Weeks 1
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    Microchip Technology Inc APT5010B2VRG

    - Rail/Tube (Alt: APT5010B2VRG)
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    Mouser Electronics APT5010B2VRG 27
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    Microchip Technology Inc APT5010B2VRG Tube 425 20 Weeks
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    Master Electronics APT5010B2VRG
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    Vyrian APT5010B2VRG 3,919
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    Microchip Technology Inc APT20M18B2VRG

    Power MOS V MOSFET N-Channel 200V 100A 3-Pin TO-247 - Rail/Tube (Alt: APT20M18B2VRG)
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    Mouser Electronics APT20M18B2VRG
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    Newark APT20M18B2VRG Bulk 250
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    Microchip Technology Inc APT20M18B2VRG Tube 20 Weeks
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    Master Electronics APT20M18B2VRG
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    Microchip Technology Inc APT8030B2VRG

    Transistor MOSFET N-Channel 800V 27A 3-Pin TO-247 - Rail/Tube (Alt: APT8030B2VRG)
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    Mouser Electronics APT8030B2VRG
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    Microchip Technology Inc APT8030B2VRG Tube 25 20 Weeks
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    Master Electronics APT8030B2VRG
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    Carling Technologies RA901-VB-B-2-V (RAV-73005000|RA901-VB-B-2-V|RA901VBB2V)

    ROCKER SWITCH, SPST, OFF-NONE-ON, RED OFF-ON LEGEND, 16A, 125V, QC, R SERIES
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    RS RA901-VB-B-2-V (RAV-73005000|RA901-VB-B-2-V|RA901VBB2V) Bulk 185 3 Weeks 1
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    B2VR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT8024B2VFR

    Abstract: APT8024B2VR APT8024LVR
    Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt8024b2vrapt8024lvro-264apt8024b2vfr+1o-247 PDF

    APT12060L

    Contextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt12060b2vrapt12060lvro-264apt12060+2o-247apt12060l PDF

    APT10050B2VFR

    Abstract: APT10050LVFR
    Contextual Info: APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10050b2vfrapt10050lvfro-264apt10050+1o-247 PDF

    diode 132

    Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt8024b2vrapt8024lvro-264apt8024+2o-247diode 132 PDF

    Contextual Info: B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt20m18b2vrapt20m18lvro-264apt20m18+1o-247 PDF

    APT50M85B2VR

    Abstract: APT50M85LVR
    Contextual Info: B2VR APT50M85LVR 500V 56A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt50m85b2vrapt50m85lvro-264o-247 PDF

    diode 304

    Abstract: 11200-1 B2VR 72 RG
    Contextual Info: B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt30m40b2vrapt30m40lvro-264apt30m40+5o-247diode 30411200-1b2vr72 rg PDF

    Contextual Info: B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt50m85b2vrapt50m85lvro-264apt50m85+1o-247 PDF

    APT6011B2VR

    Contextual Info: B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt6011b2vrapt6011lvro-264apt6011+1o-247 PDF

    Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10040b2vrapt10040lvro-264apt10040+1o-247 PDF

    Contextual Info: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt20m18b2vra20m18lvro-264o-247 PDF

    APT12060B2VR

    Abstract: APT12060LVR
    Contextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt12060b2vrapt12060lvro-264apt12060+1o-247 PDF

    Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt8024b2vrapt8024lvro-264apt8024+1o-247 PDF

    Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt8024b2vrapt8024lvro-264apt8024b2vfr+1o-247 PDF

    Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10040b2vrapt10040lvro-264apt10040+1o-247 PDF

    ED 58A

    Contextual Info: B2VR APT50M80LVR 500V 58A 0.080W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt50m80b2vrapt50m80lvro-264apt50m80+2o-247ed 58a PDF

    050590

    Abstract: APT10040B2VR APT10040LVR
    Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10040b2vrapt10040lvro-264apt10040+2o-247050590 PDF

    Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10040b2vrapt10040lvro-264apt10040+1o-247 PDF

    Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt6011b2vrapt6011lvro-264o-247 PDF

    MAX1370

    Abstract: APT10M09LVR
    Contextual Info: B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10m09b2vrapt10m09lvro-264apt10m09+2o-247max1370 PDF

    Contextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt12060b2vrapt12060lvro-264apt12060+1o-247 PDF

    A20M18LVR

    Abstract: APT20M18B2VR
    Contextual Info: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt20m18b2vra20m18lvro-264o-247 PDF

    Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt8024b2vrapt8024lvro-264apt8024b2vfr+1o-247 PDF

    Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt6011b2vrapt6011lvro-264o-247 PDF