050590 Search Results

APT8024B2VFR

Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5020BLC

Contextual Info: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and

A20M18LVFR

Abstract: APT20M18B2VFR
Contextual Info: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APL1001J

Contextual Info: S S D G 27 2 T- D G SO APL1001J S ISOTOP 18.0A 0.60W 1000V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

APL1001J

Contextual Info: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60Ω "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

APL501J

Contextual Info: S S D G 27 2 T- D G SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

xcf16pfs

Abstract: Xilinx XCF04S XCF01S XC2V80 DS026
Contextual Info: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.3 May 7, 2004 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles

TO-247 Package

Contextual Info: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

813A

Abstract: APL1001J
Contextual Info: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

XCF16PFS48C

Abstract: XC2V80
Contextual Info: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.0 November 5, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From

XCF04S pcb

Abstract: XC2V80
Contextual Info: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles

APT10040B2

Contextual Info: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

NW4004-CS01

Abstract: 33070 S1365 050590
Contextual Info: SAW Bandpass Filter 250151B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions

Contextual Info: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

050590

Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
Contextual Info: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

F5044

Abstract: XCF02SVOG20C Xilinx XCF08P xcf04svOg20c XCF16PFS48C XCF04S fit XCF01S-VO20C F50450 marking aab 8 tsop XCF04SVO20C0936
Contextual Info: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles

PF7700

Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TO-264 Package

Abstract: APT5010LLC
Contextual Info: APT5010LLC 500V 47A 0.100 Ω POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT5020BLC

Abstract: APT5020 APT5020SLC
Contextual Info: APT5020BLC APT5020SLC 500V 26A 0.200W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: S S D D G G 27 2 T- SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

XCF02S pcb

Abstract: XCF08PFS48 XCF32PFS48C XCF01SVO20 XCF02S XCF32P DS123 FS48 VO20 VO48
Contextual Info: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.1 November 18, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From

APT10M09B2VFR

Abstract: APT10M09LVFR
Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®