APT8024B2VFR Search Results
APT8024B2VFR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT8024B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 40.08KB | 2 | ||
| APT8024B2VFR | Microsemi | Power MOS V FREDFET | Original | 139.79KB | 4 |
APT8024B2VFR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APT8024B2VFRContextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vfrapt8024lvfro-264apt8024+2 | |
|
Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vfrapt8024lvfro-264o-247 | |
PF7700Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vfrapt8024lvfro-264apt8024+3 | |
APT8024B2VFR
Abstract: APT8024LVFR
|
Original |
apt8024b2vfrapt8024lvfro-264o-247 | |
|
Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vfrapt8024lvfro-264o-247 | |
APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
|
Original |
apt8024b2vrapt8024lvro-264apt8024b2vfr+1 | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
|
Original |
catalog mosfet transistor smdaptgu140a60taptgu180da120military resistors catalog+6 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
|
Original |
mil-prf-19500iso90015017bvr40814+8 | |
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
|
Original |
sot-227 footprintvrf2933sp6-parf1511+6 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
|
Original |
mj 1504 transistor equivalentarf450fredfetstransistors mj 1504+6 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
|
Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
|
Original |
apt100gf60lr1200 volt mosfetfredfetssot-227 footprint+6 | |
|
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vrapt8024lvro-264apt8024b2vfr+1 | |
|
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt8024b2vrapt8024lvro-264apt8024b2vfr+1 |