B1A5 Search Results

B331 transistor

Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
Contextual Info: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri­

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

CDC2509

Abstract: KM44S16030BT
Contextual Info: Preliminary KMM378S3227BT SDRAM MODULE KMM378S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S3227BT consists of eighteen CMOS Stacked

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 8123456788896AB78CDEDFD8C 8 888 8 88888888 88 88888888 8 8 D8F 888 88FF8C8CDC88F D!8D89"#8F  9DEB3$8%8&' 3 %*+8&'($8,26-8,C$8FF8 )%8DDEDC

W57-XB1A5A10-10

Contextual Info: Part Details for P/N: W57-B1A5A10-10 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home English | 日本語 Tuesday, 27 September, 2005 Circuit Breakers Thermal Circuit Breakers CATALOG ● W57-B1A5A10-10 Cross Reference

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

CDC2509

Abstract: KMM378S1723T-G0 KMM378S1723T-G8 KMM378S1723T-GH KMM378S1723T-GL
Contextual Info: Preliminary KMM378S1723T SDRAM MODULE KMM378S1723T 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S1723T is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

CDC2509

Abstract: KMM378S1620CT-G0 KMM378S1620CT-G8 KMM378S1620CT-GH KMM378S1620CT-GL
Contextual Info: Preliminary KMM378S1620CT SDRAM MODULE KMM378S1620CT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S1620CT is a 16M bit x 72 Synchro- • Performance range nous Dynamic RAM high density memory module. The Sam-

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

CDC2509

Abstract: KMM378S3320T-G0 KMM378S3320T-G8 KMM378S3320T-GH KMM378S3320T-GL
Contextual Info: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3320T is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

CDC2509

Abstract: KMM378S1620BT-G0 KMM378S1620BT-G8 KMM378S1620BT-GH KMM378S1620BT-GL
Contextual Info: Preliminary KMM378S1620BT SDRAM MODULE KMM378S1620BT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S1620BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S1620BT consists of eighteen CMOS 16M x 4 bit

CDC2509

Abstract: B1A5 KMM378S823CT-G0 KMM378S823CT-G8 KMM378S823CT-GH KMM378S823CT-GL
Contextual Info: Preliminary KMM378S823CT SDRAM MODULE KMM378S823CT 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S823CT is a 8M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment