B13 TRANSISTORS Search Results

Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278

B13 transistors

Contextual Info: Die no. B-13 PNP silicon transistor These are epitaxial planar PN P silicon transistors. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCE0 = 80 V min at 1.0 mA • . .

transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Contextual Info: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22

1DI200H-055

Contextual Info: COLLMER SEHICONDUCTOR INC MÔE D • E S a ß ? 1^ O GD lb D1? bS7 « C O L BIPOLAR TRANSISTORS Ratings and Specifications 53 ^ T-v?,- 600 volts class power transistor modules for DC chopper • P o w e r t r a n s is t o r s a n d free w h e e ls are built in to o n e p ac ka ge .

1DI200H-055

Abstract: DIODE B14 max 550 transistor B14 diode on semiconductor 1DI200h055 DC chopper 1DI100F100 1DI100E100 1DI150 1DI150H055
Contextual Info: COLLMER SEMICONDUCTOR INC WM SSaßTia OOOlbO*} bS7 * C O L 4BE D BIPOLAR TRANSISTORS Ratings and Specifications ^ @ 3 600 v olts class pow er tra n sisto r m odules for DC chopper • P o w e r t r a n s is t o r s a n d fr e e w h e e ls a re b u ilt in t o o n e p a c k a g e .

2M5087

Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

b13 smd

Abstract: marking B12 smd marking b12 b14 smd 2SC4173 2SC417 30V30
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4173 Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

SMD SOT23 b12

Abstract: b13 smd b14 smd smd marking b12 ON B14 PT-200 2SC3739 marking B14 SOT
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC3739 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 High gain bandwidth product: fT=200MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3739 SOT-23-3L TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. EMITTER 2. BASE 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

Marking B12

Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
Contextual Info: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO

75150 PC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings

2N3906 EBC

Abstract: 2N4403 EBC 2N3906EBC
Contextual Info: Bipolar transistors-US/European series PNP transistors Table 5 General purpose small signal amplifiers Part no. 2N5087 Term arrmnt 1 23 EBC B VCbo B V c e o B V EbO •C B0 V CB h FE I c &V ce VCE &VBE @ lc C 0 b »T @ ' c sat (sat) max min min min min

RM3 transistors

Abstract: B13 transistors
Contextual Info: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10

PIN CONFIGURATION OF THREE LEGS VARIABLE capacitor

Abstract: diode cross reference
Contextual Info: RF2512 UHF TRANSMITTER Typical Applications • Single- or Dual-Channel LO Source • 433/868/915MHz ISM Band Systems • FM/FSK Transmitter • Wireless Security Systems • Wireless Data Transmitters U F pg O ra R de d N P E ro W du ct D R ES F2 51 IG 4/ N

A5169

Abstract: BF256 BF256C BF 256 BF256B BF256A
Contextual Info: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.

Contextual Info: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts

D44h7

Abstract: D44H12
Contextual Info: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:

Contextual Info: i„ /= 7 SGS-THOMSON ^7 liiiilDÊlEiOIlLiÊTrMMDigi S T V 1 3 8 9 A Q CABLE DRIVER FOR DIGITAL TRANSFER • 1 DIFFERENTIAL INPUT, 3 DIFFERENTIAL OUTPUTS ■ SUFFICIENT DRIVE CAPABILITY FOR A 300m LENGTH COAXIAL CABLE ■ STABILITY DUE TO MINIMAL WAVEFORM

80487

Abstract: D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D929 Q62702-D930 BD 202 transistors
Contextual Info: 2SC T> U fl535b05 QQ04373 7 M S I E 6 . PNP Silicon Planar Transistors -T-33'rt BD 487 _BD 488 SIEMENS AKTIENGESELLSCHAF 04373 B D 4 8 7 and B D 4 8 8 are epitaxial P N P silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

dc chopper circuit

Abstract: DC chopper dc to dc chopper DIODE B12 CHopper DC M206 vce 1200 and 5 amps transistor diode chopper power transistor motor control wheel
Contextual Info: 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s fo r D C c h o p p e r • P o w er transistors and free w h e e ls are b uilt into one package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter D k v k ; h ly p u I Vcso

QFP32

Abstract: STV1389AQ STV1601A
Contextual Info: STV1389AQ CABLE DRIVER FOR DIGITAL TRANSFER . . . . . 1 DIFFERENTIAL INPUT, 3 DIFFERENTIAL OUTPUTS SUFFICIENT DRIVE CAPABILITY FOR A 300m LENGTH COAXIAL CABLE STABILITY DUE TO MINIMAL WAVEFORM DISTORTION BIPOLAR SILICON MONOLITHIC IC APPLICATIONS DATA TRANSFER BETWEEN DIGITAL SIGNAL PROCESSING EQUIPMENT