B0A11 Search Results

b1a12

Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Contextual Info: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit

M390S6453DT1

Abstract: M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S6453DT1 M390S6453DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S6453DT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M390S3320DT1

Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous

PC133 registered reference design

Contextual Info: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

b1a12

Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
Contextual Info: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004

Contextual Info: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)

Contextual Info: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD

PC133 registered reference design

Contextual Info: M390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 PC133 Registered DIMM M390S3320BT1 M390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

B0411

Abstract: b0401
Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: MITSUBISHI LSIs MH4V72CTJ -6, -7 FAST PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH4V72CTJ is 4194304-word x 72-bit dynamic ram module. This consist of eighteen industry standard 4M x 4 dynamic RAMs in TSOP and two industry standard input

Contextual Info: MITSUBISHI LSIs MH32V7245AJ -5, -6 HYPER PAGE MODE 2415919104 - BIT 33554432 DE$CRIPTION PIN CONFIGURATION The fllH32V7245AJ is 33554432-word x 72-bit dynamic ram module. This consist of thirty-six industry standard 16M x!4 dynamic RAMs in SOJ and two industry standard

Contextual Info: M390S6450CT1 PC133 Registered DIMM M390S6450CT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous

Contextual Info: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked

Contextual Info: SDRAM MODULE Preliminary KMM377S823BT1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (24pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (Aug. 1998) - Package Dimension changed. REV. 5 Aug. 1998 Preliminary

KM48S8030

Abstract: KMM350S823BT1-GL
Contextual Info: SDRAM MODULE Preliminary KMM350S823BT1 Revision History Revision 3 July 1998 - "REGE" description is changed. Revision 4 ( Aug. 1998) - Package Dimension changed REV. 4 Aug. 1998 Preliminary KMM350S823BT1 SDRAM MODULE KMM350S823BT1 SDRAM DIMM (Intel 1.0 ver. Base)

CDC2510A

Abstract: KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U
Contextual Info: Preliminary KMM375S3227BT SDRAM MODULE KMM375S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S3227BT consists of eighteen CMOS Stacked

CDC2510A

Abstract: KMM377S3227BT1-GL MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)

CDC2509

Abstract: KM44S16030BT
Contextual Info: Preliminary KMM378S3227BT SDRAM MODULE KMM378S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S3227BT consists of eighteen CMOS Stacked

KMM375S1723T-G0

Abstract: KMM375S1723T-G8 KMM375S1723T-GH KMM375S1723T-GL
Contextual Info: Preliminary KMM375S1723T SDRAM MODULE KMM375S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S1723T is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S1723T consists of nine CMOS 16Mx8 bit

M377S6428AT3-C1H

Abstract: M377S6428AT3-C1L
Contextual Info: M377S6428AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM (Intel 1.2 ver Base)

KMM377S6450AT3-GL

Abstract: KMM377S6450AT3-GH
Contextual Info: SDRAM MODULE KMM377S6450AT3 KMM377S6450AT3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT3 consists of eighteen CMOS 64Mx4

KMM377S6428T3-GH

Abstract: KMM377S6428T3-GL
Contextual Info: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Revision 0.2 (April 29, 2000) - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice."