D16U Search Results

MA2180

Contextual Info: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The

Contextual Info: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The

ACIG-UM001

Abstract: 1799-ZCIO DIN EN 60068-2-14 Na 42560 1799-DNETCON 777df-d50p DDM50 pnp 3223 1799-AUXCON 1923432
Contextual Info: Technical Data Embedded I/O for DeviceNet 1799 Family The 1799 Embedded I/O family provides 24V dc digital I/O modules that can be mounted directly inside a machine in a conveyor rail or within a field replaceable unit. The 1799 modules contain I/O circuits,

ACIG-UM001

Abstract: pnp 3223 1799-ZCIO 1799-DNETCON 1923432 3223 pnp 777df-d50p DNET-SG001 1799-ZCIOV devicelogix network output
Contextual Info: EMBEDDED I/O FOR DEVICENET SELECTION GUIDE 1799 FAMILY 2 Overview Introduction The 1799 Embedded I/O family provides 24V dc digital I/O modules that can be mounted directly inside a machine in a conveyor rail or within a field replaceable unit. The 1799 modules contain I/O circuits, a built-in power

CDC2510A

Abstract: KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U
Contextual Info: Preliminary KMM375S3227BT SDRAM MODULE KMM375S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S3227BT consists of eighteen CMOS Stacked

CDC2510A

Abstract: KMM377S3227BT1-GL MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)

Contextual Info: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

D12U

Contextual Info: M377S6428MT1 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428MT1 PC100 Registered DIMM M377S6428MT1 SDRAM DIMM (Intel 1.0 ver. Base)

1-30N

Contextual Info: Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3227BT1 is a 32M bit x 72 Synchro­

Contextual Info: M377S2858AT2 SDRAM MODULE Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S2858AT2 SDRAM MODULE M377S2858AT2 SDRAM DIMM (Intel 1.1 ver. Base)

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

KMM377S2858AT3-GH

Contextual Info: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

CDC2509

Abstract: MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT Revision History Revision .2 Jan. 1998 •DC Characteristics values are changed. : ICC2 N & ICC3 N •STANDARD TIMING DIAGRAM is changed . •All AC parameters are measured by module tap reference(refer to page#5) •CAS Latency is based on Reg. DIMM (In case of Unbuff. DIMM CAS Latency is 1 CLK earlier than this)

CDC2510A

Abstract: KMM375S6427T-GL KMM375S6427T-G0 KMM375S6427T-G8 KMM375S6427T-GH
Contextual Info: Preliminary KMM375S6427T SDRAM MODULE KMM375S6427T SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S6427T is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S6427T consists of eighteen CMOS Stacked

Contextual Info: M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM Intel 1.2 ver Base 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M377S6428AT3 is a 64M bit x 72 Synchronous

b1a12

Abstract: M377S2858BT3-C1H
Contextual Info: PC100 Registered DIMM M377S2858BT3 M377S2858BT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858BT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858BT3 consists of eighteen CMOS Stacked

Contextual Info: SDRAM MODULE Preliminary KMM377S6427T3 Revision History R e visio n 1 Feb. - 1999 Corrected CS Swapping in Block Diagram. REV. 1 Feb 1999 Preliminary KMM377S6427T3 SDRAM MODULE KMM377S6427T3 SDRAM DIMM 64M x72 SDR AM DIMM w ith PLL & R egister based on S tacked 64M x4, 4B anks, 4K Ref., 3.3V S D R A M s w ith SPD

Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn­

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

Contextual Info: PC100 Registered DIMM M377S2858CT3 M377S2858CT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858CT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858CT3 consists of eighteen CMOS Stacked

CDC2510A

Abstract: KMM377S6427T1GL
Contextual Info: SDRAM MODULE Preliminary KMM377S6427T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM377S6427T1 SDRAM MODULE KMM377S6427T1 SDRAM DIMM (Intel 1.0 ver. Base)

M377S2858AT3-C1H

Abstract: M377S2858AT3-C1L
Contextual Info: M377S2858AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 PC100 Registered DIMM M377S2858AT3 M377S2858AT3 SDRAM DIMM (Intel 1.2 ver Base)