B 435 TRANSISTOR Search Results

C2N3704

Abstract: 2N3704 2N3706 2n3705 transistor 2n3704 2n3704 transistor 2N3704 datasheet
Contextual Info: Datasheet Central 2N3704 2N3705 2N3706 Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE ( EC B ) Manufacturers of World Class Discrete Semiconductors DESCRIPTION

Transistor BC109

Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c
Contextual Info: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors

MPQ2369

Contextual Info: Data Sheet Central Sem iconductor Corp. m _ _ b t m MPQ.2369 NPN S IL IC O N QUAD TRANSISTOR 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 JEDEC T O - 116 CASE Manufacturers of World Class Discrete Semiconductors

TN3725

Abstract: TN3724
Contextual Info: Datasheet Central TN3724 TN3725 Semiconductor Corp. NPN SI LI CON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE (EBC) Manufacturers of World Class Discrete Semiconductors U t b L K I r I I UN

2N3251

Abstract: transistor 2N3251 2N3250 2N3250A 2N3251A
Contextual Info: Datasheet 2N3250 EflHffW 1 i i B v n n iI • _ ^ - - M 2N3250A 2N3251 2N3251A se m ico n d u cto r worp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON TRANSISTOR JED EC TO-18 CASE Manufacturers of World Class Discrete Semiconductors

CS92B

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Package Details - TO-92 Mechanical Drawing SYMBOL A (DIA) B C D E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500

"P-Channel JFET"

Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
Contextual Info: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors

t125 switch

Abstract: BUK437-600B
Contextual Info: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8

transistor 438

Abstract: TRANSISTOR BD 436 A8550 BD433B TRANSISTOR BD 437 TRANSISTOR 434
Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO -126 • Com plem ent to BD433, B D 435 and BD 437 respectively ABSO LU TE MAXIMUM RATINGS Sym bol C h ara cte ristic Collector B a s e Voltage : BD 434 : BD 436

Philips 1H0

Abstract: LD25C BUK437-600B
Contextual Info: P H IL I PS I N T E R N A T I O N A L bSE » ES 7 1 1 0 0 2 b D G b 3 R E b 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

BFR101A

Abstract: marking 1117 BFR101B
Contextual Info: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated

AB marking code diode

Abstract: BFR101B BFR101A
Contextual Info: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

SC08810

Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
Contextual Info: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in

T0-126 pin configuration

Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V

d433

Abstract: 8D437 B0435 BD436 BD437 BD435-25 BD439 BD441 BD433-25 BD433
Contextual Info: P h ilip s S e m ico n d u cto rs _ Prelim inary sp ecification Silicon epitaxial-base transistors D ESCRIPTIO N Q UICK R E F E R E N C E DATA PINNING • TO-126 SOT32 DESCRIPTION 1 emitter 2 collector 3 base SYM BOL V cE S PARAM ETER collector-emitter voltage

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

bd435 fairchild

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

tfk 434

Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
Contextual Info: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung

BG433

Abstract: Bo435 vertical tv deflexion BD 435 sus 433
Contextual Info: BD433 BD435 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS S IL IC IU M NPN. BASE E P IT A X IE E Compì, o f BD 4 3 4 , BO 436 P R E L IM IN A R Y D A T A NOTICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­