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bond wire gold

Contextual Info: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)

Au Sn eutectic

Contextual Info: SLC MICROWAVE / MILLIMETERWAVE CAPACITORS KEY FEATURES • Ceramic SLC Low Profile Devices Exhibit Very High-Q / Low Insertion Loss, SRFs to 50 GHz • Thin Film Gold Electrodes Provide Superior Wire Bonding & Die Attach Performance • Six SLC Device Types to Fit Many Applications:

TR13

Abstract: bond wire gold
Contextual Info: Package Details - SOT-223 Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)

mimo

Abstract: MAAA2000G
Contextual Info: RoHS Compliant GaAs MMIC Voltage Variable Absorptive Attenuator DC - 12 GHz Features • • • • • • • • MAAA2000G V3 Functional Schematic Single or Dual Bias Control Easily Cascadable Small Size Attenuation Flatness DC - 12 GHz ± 0.2 dB Low Control Current Consumption

equivalent of transistor D 2331

Abstract: EIA-468-B TO 92 leadframe TRANSISTOR S 838 EIA-468 CS92B
Contextual Info: Package Details - TO-92 Mechanical Drawing SYMBOL A DIA B C D E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03

radar mmic

Contextual Info: MAAM28000 Wide Band GaAs MMIC Amplifier 2.0 - 8.0 GHz Features • • • • M/A-COM Products Rev. V5 Die 18 dB Typical Gain ± 0.5 dB Typical Broadband Gain Flatness Single Bias Supply: +10 V DC Decoupled RF Input and Output Description M/A-COM’s MAAM28000 is a wide band, MMIC

FPD1500

Abstract: FPD1500 SOT89 ablestick 550 MIL-HDBK-263
Contextual Info: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

FPD6836

Abstract: FPD6836-000SQ FPD6836-000 pseudomorphic HEMT MIL-HDBK-263 TRANSISTOR 841
Contextual Info: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: MASW6010G
Contextual Info: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G

MASW20000

Contextual Info: GaAs SPDT Switch DC - 20 GHz MASW20000 V4 Features • • • • • • • Pad Layout Very Broadband Performance Low Insertion Loss: 1.75 dB Typical @ 18 GHz High Isolation: 50 dB Typical @ 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration

FPD3000

Abstract: MIL-HDBK-263
Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

pseudomorphic HEMT

Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
Contextual Info: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure

pseudomorphic HEMT

Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed

MSTF-2ST-10R00J-G

Abstract: Au Sn eutectic M570 bond wire gold soft solder die bonding 84-1LMI
Contextual Info: Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMIC’s Discussion Millimeterwave MMIC's are becoming more common in commercial applications. Their small size and potentially lower cost has made them valuable in the growing market of millimeterwave systems. Their size and delicate nature

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

MAAM71100

Contextual Info: an A M P company GaAs MMIC Power Amplifier 7-11 GHz MAAM71100 V 2.00 Features • • • • • □* ö ' ü ' ü p , +31 dBm Typical Saturated Power 18 dB Typical Gain 30% Typical Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output

X-band Gan Hemt

Abstract: MIL-HDBK-263 fma3010
Contextual Info: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

CMM3020-BD

Abstract: CMM3020-BD-0048 CMM3020-BD-0192 OC192 optical modulator driver celeritek ghz
Contextual Info: 30 kHz-20 GHz GaAs MMIC Optical Modulator Driver Amplifier August 2006 - Rev 02-Aug-06 CMM3020-BD Features Small Size: 43 x 92 mils High Gain: 10 dB Typical Output Voltage up to 7.5 V Peak-to-Peak 30 kHz to 20 GHz Bandwidth Low Gain Ripple: 1.0 dB pp Typical

NN12

Abstract: P35-4252-000-200
Contextual Info: Data sheet MMIC SP4T Reflective Switch, DC - 4GHz The P35-4252-000-200 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. A 50 Ω termination is

NN12

Abstract: P35-4250-000-200 Switch 4GHz
Contextual Info: Data sheet MMIC SP4T Reflective Switch, DC - 4GHz The P35-4250-000-200 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective

rf mems switch spst

Abstract: FMS2023 FMS2023-000 MIL-HDBK-263
Contextual Info: FMS2023 FMS2023 DC-20GHz MMIC LOW LOSS SPST ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2023 is a low loss, high isolation broadband single-pole-single-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It

MAAM26100

Contextual Info: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V4 Features • • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description M/A-COM’s MAAM26100 is a GaAs MMIC two

FMS2024

Abstract: v44 diode FMS2024-000 MIL-HDBK-263 High Isolation Reflective Switch DC-5GHz
Contextual Info: FMS2024 FMS2024 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2024 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It