ATE 2N60 Search Results

4410b

Abstract: 2n6043 2N6044 2N6045
Contextual Info: 3875081 G E SOLID ST ATE 01 d F Ï 3Û7SDÔ1 DQlVEEb b T d Darlingion Power Transistors ;_ 5 _ T- J J 5 _ File Number 1151 2N6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors

Triac 2N6075

Abstract: 2N6075 triac 2N6075 2N60758 2N6073 MOTOROLA 2N6075 MOTOROLA motorola voltage reference 2N6074 TRIAC 2N6071 A 2N6072
Contextual Info: MOTOROLA SC öl -CDI ODES/OPTO} » F |t 3 t ? a s s □□7ciaoa 3 T - 2 J T - Í3 2 N 6 0 7 1 ,A ,B S e n sitiv e G ate T ria cs thru Silico n Bidirectional Thyristors 2 N 6 0 7 5 ,A ,B . . . designed primarily for full-wave ac control applications, such as light dimmers,

6071A

Abstract: 2N6075A 2N6075 MOTOROLA MBS4993 2N6073 TRIAC Z Triac 2N6075 6071B 2N6071 MOTOROLA 2N6074
Contextual Info: öl M O T O R O L A SC -CDIODES/OPTO} » F | t 3 t ? a s s □□7ciaoa 3 T - 2 J T - Í3 2 N 6 0 7 1 ,A ,B thru 2 N 6 0 7 5 ,A ,B S e n sitiv e G ate T riacs Silicon Bidirectional Thyristors . . designed primarily for full-wave ac control applications, such as light dimmers,

SOT-252 20v

Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
Contextual Info: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T

p2n60

Abstract: ATE 2N60 TP2N60 IC D 2N60 2n55 mtp2n55 S550A 2n60 MOSFEt
Contextual Info: MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA M T P 2N 55 M T P 2N 60 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S T M O S P O W ER FETs 2 AM PERES These TM O S P ow er FETs are designed fo r high voltag e , high

6075A

Abstract: 6073b 2N6073 ab 2N6071, A, B 2N6073, A, B 2N6075, A, B 2N6073 MOTOROLA 6071A ic c 6073 2n6073 mbs4993
Contextual Info: 2 N 6 0 7 1 ,A ,B 2 N 6 0 7 3 ,A ,B 2 N 6 0 7 5 ,A ,B S e n s itive G ate Triacs Silicon Bidirectional Thyristors . . . desig ned p rim a rily fo r fu ll-w a v e ac c o n tro l ap plication s, such as lig h t d im m ers, m o to r con trols, heating co n tro ls and p o w e r su p p lie s; or w h e re ve r fu ll-w a ve silicon

Unijunction

Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
Contextual Info: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N

2n6075 equivalent

Abstract: 2N6068 an526 screw MAC77-8 701o MAC77 WD19 Triac 2N6075 an526 2000C
Contextual Info: ? 2N6068 thru 2N6075 ——— SILICON BiE}l SECTIONAL. designed .,. primarily light dimmers, or wherever needed. state fol’ full-wave motor full-wave silicon for either polarity negative gate triggering. e All o Small, Rugged, from c f applied solid-state

2N6082

Abstract: transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6082 T h e R F L in e 25 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N NPN S IL IC O N RF POWER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in com m ercial and industrial equipm ent operating to

2N6027 MOTOROLA

Abstract: 2N6027 2N6028 MOTOROLA 2N6028 Q375 2N6028 CIRCUIT 2n6027 circuit
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program” unijunction characteristics such as R b b . ri, ly, and ip by merely selecting two resistor values. Application includes

2N6084 equivalent

Abstract: MRF-226 MRF221 MRF226
Contextual Info: MRF221 See 2N6081 MRF224 (See 2N6084) MOTOROLA SEM ICONDUCTOR TECHNICAL DATA T he R F Line 13 W - 225 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt large-signal power amplifier applica­ tions in com munication equipm ent operating at 225 MHz.

2n6028

Abstract: 2n6027 ha1818 motorola programmable unijunction 2n6027 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction TVansistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program1’ unijunction characteristics such as r BB. fl. IV. ar|d 'P by merely selecting two resistor values. Application includes

IC SEM 2105

Abstract: RF POWER TRANSISTOR NPN, motorola transistor 0132 2N
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6082 The RF Line 2 5 W - 175 M H z RF POWER TRANSISTOR NPN SILIC O N NPN S IL IC O N R F POW ER T R A N S IS T O R S . . . designed fo r 12.5 V o lt V H F large-signal a m plifier applications required in commercial and industrial equipm ent operating to

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

2N6028

Abstract: 2N6027 MOTOROLA 2n6027
Contextual Info: 2N6027 2N6028 Programmable Unijunction Transistors Silico n Program m able Unijunction T ran sisto rs P U Ts 40 V O L TS 300 m W . . . d e sig n e d to enable the e n g ineer to "p ro g ra m " unijunction ch aracteristics such as R b B ’ V i IV ’ ar|d Ip by m e re ly selecting tw o re sisto r va lu e s. A p p licatio n includ es

GE 2N6027

Abstract: 2N6028 MOTOROLA 2N6027 ge 6028F
Contextual Info: 2N6027 2N6028 P ro gram m ab le Unijunction T ran sisto rs Silicon Program m able Unijunction Transistors . . . d e s ig n e d to e n a b le the e n g in e e r to " p r o g r a m " u niju nction ch a racteristics su c h a s R g g , 7j, ly, a n d Ip b y m e re ly sele ctin g tw o re sisto r va lu es. A p p lic a tio n in clu d e s

SCR Handbook, rca

Abstract: C106Y RCA 559 TO3 SCR Handbook, rca s2061a
Contextual Info: mm • H Silicon Controlled Rectifiers SCR’s Type Selection Charts Voltage Current !T R C A (R M S) Types A IT S M Temp. V DROM V RROM V 50/60 Hz A Max.-Gate Char. IG T V GT mA V 3.5 18.5/20 45 200 2.5 100 15 30 50 100 3.14 14/15 45 200 0.5 0.8 2.5 100

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

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2n60c3

Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
Contextual Info: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A