ATC600F1R8BT250XT Search Results
ATC600F1R8BT250XT Price and Stock
Kyocera AVX Components 600F1R8BT250XTSilicon RF Capacitors / Thin Film 250volts 1.8pF NP0 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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600F1R8BT250XT | 7,865 |
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600F1R8BT250XT | Reel | 5,000 | 500 |
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ATC600F1R8BT250XT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
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MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from |
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1 | |
ATC600S10Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth |
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MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10 | |
atc 17-25
Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 | |
ATC600F470BT250XT
Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor | |
ATC600F1R8BT250XT
Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X
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74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X | |
ATC600S2R7BT250XT
Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
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MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT | |
J477
Abstract: J733 J449 MD7IC2250 MD7IC2250N AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT
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MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J477 J733 J449 MD7IC2250 AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT | |
ATC600F241JT
Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 | |
J733Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage |
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MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J733 | |
Contextual Info: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically |
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MMG3014N MRFG35010AN | |
RO4350BContextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B | |
hitachi rf ldmos
Abstract: MMG15241H crcw120610k0fkea
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MMG15241H MD7IC2250N hitachi rf ldmos crcw120610k0fkea |