AT42086 Search Results

AT-42086

Abstract: AT-42086-BLK AT-42086-TR1 S21E 42086tr1
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT-42086

Abstract: AT-42086-BLK AT-42086-TR1 S21E
Contextual Info: AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron

oscillator schematic diagram

Abstract: AT-42086 MSA-1104 transistor 892 X1 BB405 MSA-1105 schematic circuit for computer system MSA1104 AT-41411 BB405B
Contextual Info: Agilent 750 - 1250 MHz Voltage Controlled Oscillators Application Note S014 Introduction This application note describes the design and performance of two low-cost voltage-controlled oscillators VCOS for the 750 to 1250 MHz frequency range, intended for TV downconverter

Contextual Info: Agilent AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

avantek microwave

Abstract: AVANTEK oscillator Avantek UA-152
Contextual Info: AVANTEK INC 20E D Qavantek • lm n b b GDGbMTa b AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor ' P I I -2.1 Avantek 86 Plastic Package Features • High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB typical Gi dB at 2.0 GHz

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

sm 4109

Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

AT-42086

Abstract: AT-42086-BLK AT-42086-TR1 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AT-42086

Abstract: At42086 AT-42086-BLK AT-42086-TR1 42086tr1 90NF0
Contextual Info: t What H E W L E T T mLUM P A C K A R D Up to 6 GHz M edium Pow er S ilicon B ipolar T ransistor Technical Data A T-42086 F ea tu res • High O utpu t Pow er: 20.5 dBm Typical P[ ¿g at 2.0 GHz • High Gain a t 1 dB C om pression: 13.5 dB Typical Gj ^ a t 2.0 GHz

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

sm 4109

Abstract: transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033
Contextual Info: Low Noise Transistors Typical Specifications @ 25°C Case Temperature Part Number AT-30511 Frequency (GHz) VCE (V) NFo (dB) Ga (dB) P1 dB (dBm) 0.9 2.7 1.1 16.0 +7.0 G1 dB |S21E|2 @ 1.0 GHz (dBm) (dB) Package Page No. 16.5 17.9 [1] SOT-143 plastic SM 4-23

ISDB-t modulator

Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth

AT42086-BLK

Contextual Info: What H E W L E T T * mLliM P A C K A R D Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 13.5dBTypicaIGldBat2.0 GHz • Low N oise Figure:

AT-41435

Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

Bipolar Transistors Selection Guide

Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

transistor 892 X1

Abstract: K band VCO MMIC MSA-1104 amplifier MSA-1104 BB405 AT-42086 schematic circuit for computer system AT-41411 BB405B MSA-1105
Contextual Info: 750 - 1250 MHz Voltage Controlled Oscillators Application Note S014 Introduction This application note describes the design and performance of two low-cost voltage-controlled oscillators VCOS for the 750 to 1250 MHz frequency range, intended for TV downconverter applications. Each VCO

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)