AT01635 Search Results

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE D HEW LETT PACKARD • M44 7 5Ô M DDGT7fiS 10T « H P A AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz EMITTER High Gain-Bandwidth Product: 7.0 GHz typical fr

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

AT01635

Abstract: AT-01635
Contextual Info: WKSÏÏ HEW LETT 1"EM P A C K A R D AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features • • • • 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

Contextual Info: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical

AT-01635

Abstract: AT01635 Silicon Bipolar Transistor MICRO-X Silicon Bipolar Transistor
Contextual Info: HEWLETT-PACKARD/ CHPNTS blE D MMM75ÛH □□□T76S 101 AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor W fiM H E W L E T T 1"EM P A C K A R D 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi