AT 4018 Search Results

HPND-4028 pin diode

Contextual Info: What mLliM HEWLETT* PACKARD Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0nsec • Low Resistance at Low Bias

M39003/03

Contextual Info: I CSR23 MlL-C-39003/03 Solid Tantalum Capacitors MallorY GENERAL SPECIFICATIONS Extended Capacitance Graded Failure Rates DC Leakage: At+25°C - See Table Limit At+85°C - 10 x Table Limit At+125°C - 12.5 x Table Limit Capacitance Change Maximum: -10% @ -55“C

MCT0603

Abstract: RR1608M p85 smd MCT 0603 VISHAY vishay 1206 SMD resistors MCU0805 E192
Contextual Info: MCT 0603 AT, MCU 0805 AT, MCA 1206 AT - Professional Vishay Beyschlag Professional Automotive Thin Film Chip Resistor FEATURES • Operating temperature 175 °C, 1000 h • Superior moisture resistivity < 0.5 % 85 °C; 85 % RH; 1000 h RoHS COMPLIANT • Rated dissipation P85 up to 500 mW for size 1206

HCF4018be

Abstract: hfc4018 HCF4011 4018B HCC/HFC4018B HCC4018B HCC4018BF HCF4018B HCF4018BC1 HCF4018BEY
Contextual Info: HCC/HCF4018B PRESETTABLE DIVIDE-BY-N COUNTER . . . . . . MEDIUM SPEED OPERATION - 10MHz typ. AT VDD – VSS = 10V FULLY STATIC OPERATION QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS INPUT CURRENT OF 100nA AT 18V AND 25°C

4018B

Abstract: HCC/HFC4018B HCC4018B HCC4018BF HCF4018B HCF4018BC1 HCF4018BEY HCF4018BM1 hfc4018 HCF4011B
Contextual Info: HCC/HCF4018B PRESETTABLE DIVIDE-BY-N COUNTER . . . . . . MEDIUM SPEED OPERATION - 10MHz typ. AT VDD – VSS = 10V FULLY STATIC OPERATION QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS INPUT CURRENT OF 100nA AT 18V AND 25°C

D15105

Abstract: 44fl5 271060 754for
Contextual Info: in te i 80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT Military High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS1 Sustained Execution at 25 MHz On-Chip Memory Management Unit

TNPW

Contextual Info: TNPW Vishay High Stability Thin Film Chip Resistor ≤ 0.05 % 1000 h rated power at 70 °C FEATURES • • • • Metal film layer on high quality ceramic Protective top coat Tin/lead (Pb) solder contacts Excellent overall stability at different environmental

Contextual Info: ÄEW M i DNHF@IRßM!rilON in y 80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT Military High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

marking code R52 SMD Transistor

Abstract: TNPW0402 TNPW0603 TNPW0805 TNPW1206 TNPW2010 TNPW
Contextual Info: TNPW Vishay High Stability Thin Film Chip Resistor ≤ 0.05 % 1000 h rated power at 70 °C FEATURES • • • • Metal film layer on high quality ceramic Protective top coat Tin/lead (Pb) solder contacts Excellent overall stability at different environmental

marking code R52 SMD Transistor

Abstract: R521 transistor SMD MARKING CODE HF TNPW0402 TNPW0603 TNPW0805 TNPW1206 TNPW2010 7R52 1K32
Contextual Info: TNPW Vishay High Stability Thin Film Chip Resistor ≤ 0.05 % 1000 h rated power at 70 °C FEATURES • • • • Metal film layer on high quality ceramic Protective top coat Tin/lead (Pb) solder contacts Excellent overall stability at different environmental

TA4018F

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

TA4018F

Abstract: 11515DB
Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain · Gain control range: GR = 37dB (@45 MHz) · Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

ferranti array

Contextual Info: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input

CSM 6850

Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Contextual Info: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

MQ80960MC

Abstract: LADT4 MQ80960MC-25/B MG80960MC 80960MC MQ80960MC-20/B DIODE 255 KO Intel 80960kb programmers reference LA01 80960KA
Contextual Info: in te i 80960M C EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT M ilita ry High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at 25 MHz On-Chip Floating-Point Unit

Contextual Info: O M lF < § » Ä T D [ i i] in te i 80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT Military High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

LM110H-MLS

Abstract: 5962-8875601SFA mcp501 5962R8776001SSA 75307 mcp1200 lm723hmls SGMP 100314FM-MLS DS78LS120W-MLS
Contextual Info: Space Level Inventory Report ALL OVERAGE INVENTORY IS SUBJECT TO PRIOR SALE For ordering information contact David Allen at 408 721-4018 JAN/CUSTOM PART NUMBER ANALOG /10103SGA /10103SGA /10103SHA /10103SPA /10104SCA /10104SGA /10104SGA /10104SHA /10104SHA

PCCB

Abstract: 8XC196KC chapter 5 interrupts 8XC196KC/KD 8xc196kd 8XC196KC chapter 4 memory partitions intel 8216 8XC196KC a0156 8XC196KC instruction set
Contextual Info: Programming the Nonvolatile Memory 14 CHAPTER 14 PROGRAMMING THE NONVOLATILE MEMORY The 8XC196KC/KD contains One-Time-Programmable Read-Only Memory OTPROM , a version of EPROM. The 8XC196KC has 16 Kbytes at locations 2000H-5FFFH. The 8XC196KD has 32 Kbytes at locations 2000H-9FFFH. You may program the OTPROM

Contextual Info: MILrC-39003 Military Style Tantalum Capacitors MIL-C-39003 DESIGN AND CONSTRUCTION D.C. LEAKAGE D C. leakage shall be measured using the dc rated voltage at ± 2 percent at the applicable test temperature, after a maximum electri­ fication period of 5 minutes. A 1,000-ohm resistor shall be placed in

cmos 4000 series

Abstract: mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012
Contextual Info: - ¿V 'V â - -—• c^ö ö 0 0 5388 FERRANTI INTERDESIGN, INC. . " . H I ^^M ffS E R IE S HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15M Hz at 5V.

Contextual Info: RL-4018 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • SMD Power Inductor • • • ENVIRONMENTAL DATA • • Storage temperature range: -55°C to +130°C Operating temperature range: -40°C to +130°C Low profile, great for applications when space is at a minimum