ASE 12 66 Search Results

6L6G tube

Abstract: ec 360 tube 6l6g sylvania 6l6 1N30 tube 1n30 6l6 push-pull audio circuit BP 5200 TRIODE itl ST16
Contextual Info: A S SVIAW IV V - " engineering data service MECHANICAL DATA B u lb . ST16 B , Medium Shell Octal, 7-Pin

25DN6

Abstract: 6DN6 the operation of horizontal section in television
Contextual Info: SVI A W IV SYLVANIA engineering data service QUICK REFERENCE DATA MECHANICAL DATA B u lb .T-12 B ase. B8-118, Short Medium Shell Octal, 8-Pin

2N3026

Abstract: 2N3025 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
Contextual Info: I _ 12 E tljíJ E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 TO 111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5

qml-38535

Abstract: QML-38534 A1830 A1657
Contextual Info: REVISIONS LTR DESCRIPTION A dded C ase o u t l i n e Z. DATE YR-MO-DA R e d re w e n t i r e d o c u m e n t. 9 5 - 10-12 APPROVED K.A. C o t t o n g im REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS 18 19 20 21 22 23 REV SHEET PMIC N/A STANDARD MICROCIRCUIT

Contextual Info: A P I ELECTRONICS INC 00^3592 A P I St ELECTRONICS d ËT| INC Q0M35T5 0000211 0 Q-~f^33-0 26C 00219 COLLECTOR CURRENT = 2 AMPS PN P TYPES - CONTINUED Device No C ase VCBO Volts AP1090 AP1105 AP1106 AP1107 TO -66 TO -4 6 TO -5 TO -66 125 140 140 140 VCEO sus)

AP1085

Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

westinghouse power rectifiers

Abstract: WESTINGHOUSE RECTIFIERS 2N2753 WESTINGHOUSE rectifier Westinghouse Semiconductor Westinghouse Power rectifier Westinghouse 54-161 41A hall 2N2740 2N2739
Contextual Info: POWEREX INC JEDEC ty p es 2N27392N2754 silicon pow er tra n sisto rs > • technical dala for switching, regulator and amplifier applications -J co *0 54-661 20 amperes • 200 watts collector-to-emitter voltage SO to 200 volts O' r \j i» 8 page 9 application

Macom marking code

Abstract: marking code macom
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

marking code sirenza

Abstract: macom marking
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

Contextual Info: 66092-317 LINEAR OPTOCOUPLER OPTOELECTRON DI VI SI MII 66092-317 FOR POWER SUPPLY APPLICATION FEATURES: • • • • • • • H erm etically sealed H igh reliab ility B ase lead elim in ated for im proved noise im m unity Rugged package - able to w ith sta n d high acceleration load

pac 007a

Contextual Info: rS Z S G S -T H O M S O N Ä T # M iS B m iC T l « ! BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type M arking BCW 65A EA BCW 65B EB BCW 65C EC BCW 66F EF BCW 66G EG BCW 66H EH . SILICO N EPITAXIAL PLANAR NPN T R A N SIST O R S . MINIATURE PLASTIC PAC KAG E FO R

automatic motor for reverse and forward

Abstract: FP1016 LB1645 LB1640 ac motor forward reverse control LB1687N c+9050+60001,+motor LB1651
Contextual Info: Continued rrom previous page Package Device Number of tDrawing Type pins and number configuration Description Features LA5528N M M FP 8 30 3 2 B C om p act D C motor driver Miniflat p ac ka ge version of the L A 5 5 2 8 N LA5540 S IP 4H 3027A Regulator, motor driver with brake

Contextual Info: HUF75333G3, HUF75333P3, HUF75333S3S Semiconductor Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

pnp 400v 10a

Abstract: box53a 800V PNP bdv 648 DARLINGTON ESM 30 BUV54 vceo 800V PNP BDX53 BDV66 bdx 66 bdx 67
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v C EO • 45V 60V ih o m s o n c s f 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A

S30E4A

Abstract: S30E16A
Contextual Info: 4fl5S45H G01G70b 1 • ZtaE D INTERNATIONAL REC TIFIER Phase Control Thyristors 470 TO 1420 AMPS RMS Part v number v RRM *T RMS ' t (AV) t c DRM (V) GT (TSM TM ’g t (3) 50Hz 60Hz (2) (A) (A) (°C) (A) (A) ( 2) (mA) (V) (V) d vf dt R thJC D C Case (4) (5)

Contextual Info: 1 3 2 5 4 6 7 8 Global Connector Technology Ltd. - BD095: 1.27mm PITCH PIN HEADER, DUAL ROW, SURFACE MOUNT, VERTICAL A A B B C C D D E E Ordering Grid XX X BD095 XX XXXX XXXX L X XXXX Packing Options B = Tape and Reel with Cap Standard D = Tube (not available in 6, 8 & 10 Contacts)

Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 D arlington Silicon Pow er Transistors 2N 6667 2N 6668 . . designed for general-purpose amplifier and low speed switching applications. * High DC Current Gain — hpE = 3500 (Typ) @ Iq = 4 Adc

cvk 1060

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ • A p p ro v e d b y R e lia b ility C e n te r fo r E le c tro n ic C o m p o n e n t, J a p a n -C e r titic a tio n N o . R C J -0 3 -2 3 C Low Im pedance, For Switching Pow er Supplies s e rie s Low Imperlance '.e g Life

F6 DD52

Abstract: dd52 ll87 mini circuits mcl-1 LA 4288
Contextual Info: cuse s y es outline dim sni ions m m c D H J K 1 grams. NOTES* A 01 .770 19.56 .800 20.32 .385 9.78 .400 0.16 Ç 10 .400 10 16 .200 5.08 .20 5.08 .14 3.56 .031 .79 5.2 A1,B3,E1,B7 .480 12.19 .500 12.70 .390 9.91 .405 0.29 .5 0 5 '3 .230 5.84 .100 2.54

Contextual Info: PRELIM IN ARY SC11346 Phase-Locked Loop PLL SIERRA SEMICONDUCTOR □ □ □ □ □ V C O en a b le c o n tro l for O N O F F key in g and low pow er co n su m p tio n H igh V C O lin e a rity :< l% at V = 5 V DD 3 V B u ffered o u tp u t o f V C O co n tro l inp ut

MC1662L

Abstract: MC1600 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674 MC1678 MC1688
Contextual Info: K M DOD G flH G tL O O O INTEGRATED CIRCUITS MC1600 Series -30°C to +85°C The re q u ire m e n t fo r d ig ita l systems w ith ever higher perform ance has increased the need fo r high-speed inte­ grated circu its. The in d u s try has recognized th a t th e o nly

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

MC1664

Abstract: k365 MC1600 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674 MC1678
Contextual Info: K M DOD G flH G tL O O O INTEGRATED C IR C U ITS M C 1600 Series -3 0 °C to + 8 5 °C The re q u ire m e n t fo r d ig ita l systems w ith ever higher perform ance has increased the need fo r high-speed inte­ grated circu its. The in d u s try has recognized th a t th e o nly

philips AXIAL ELECTROLYTIC capacitors

Abstract: Philips asm 021 Philips 2222 021 17222 philips capacitor 021 222 021 15222 222 016 15222 021 19101 021 90518 Philips 2222 017 capacitors
Contextual Info: Philips Components Product specification Aluminium electrolytic capacitors Axial Standard Miniature _ FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Axial leads, cylindrical aluminium case, insulated with a blue sleeve n> • Mounting ring version single