AS28C010 Search Results

Contextual Info: EEPROM AS28C010 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory 5 Volt, Byte Alterable 32-Pin CFP (F), 32-Pin CerDIP (CW) AVAILABLE AS MILITARY SPECIFICATIONS RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss SMD 5962-38267 MIL-STD-883

smd diode a7

Abstract: AS28C010 5962-3826703
Contextual Info: EEPROM AS28C010 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory 5 Volt, Byte Alterable 32-Pin CFP (F), 32-Pin CerDIP (CW) AVAILABLE AS MILITARY SPECIFICATIONS RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss SMD 5962-38267 MIL-STD-883

5962-3826705MXA

Abstract: 5962-3826703MXA AS28C010CW-15 5962-3826701MZA 5962-3826705MZA smd diode a7 AS28C010 5962-3826701 5962-3826707MXA
Contextual Info: EEPROM AS28C010 Austin Semiconductor, Inc. 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory 5 Volt, Byte Alterable 32-Pin CFP (F), 32-Pin CerDIP (CW) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss SMD 5962-38267

Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

Contextual Info: PYA28C010 128K X 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Low Power CMOS:

pya28c010

Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

AS27C256-20JM

Abstract: WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB WF1M32B-120G2UM3 IDT71256L25TCB AS5C2008 AS8S512K32Q 57C256F-55
Contextual Info: Part Number 1 of 66 Config Device Type Volt Packages Micross Part Number SMD 5962- 57C256F-55 32Kx8 UVEPROM 5V 57C256F-55 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V ACT-E128K32C120P7Q 128Kx32 EEPROM 5V ACT-E128K32C140P7Q 128Kx32 EEPROM 5V

AS28C010

Contextual Info: PYX28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A