PYA28C010 Search Results
PYA28C010 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
pya28c010250ns32-pin450x550+3 | |
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Contextual Info: PYA28C010 128K X 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Low Power CMOS: |
Original |
pya28c010250ns32-pin450x550+3 | |
pya28c010Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
pya28c010250ns32-pin450x550+3 | |
|
Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
pya28c010250ns32-pin450x550+3 | |
|
Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
pya28c256350ns28-pin32-pin+4 | |
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Contextual Info: PYA28C256 32K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional |
Original |
pya28c256350ns28-pin32-pin+4 | |
PYA28C256Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
pya28c256350ns28-pin32-pin+4 | |
PYA28C256
Abstract: eeprom
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Original |
pya28c256350ns28-pin32-pin+5 | |
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Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
pya28c256350ns28-pin32-pin+4 |