450X550 Search Results
450X550 Price and Stock
TURCK Inc IS DECAL 4.50 X 5.50 (INDIVIDUAcc |Turck IS DECAL 4.50 X 5.50 (INDIVIDU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IS DECAL 4.50 X 5.50 (INDIVIDU | Bulk | 1 |
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450X550 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104 | |
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Contextual Info: PYA28C256 32K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional |
Original |
PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104 | |
PYA28C16
Abstract: eeprom
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Original |
PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 EEPROM108 eeprom | |
PYA28C64
Abstract: eeprom
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Original |
PYA28C64 350ns PYA28C64X 28-Pin 32-Pin 450x550 eeprom | |
P4C1256LContextual Info: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O |
Original |
P4C1256L 70mA/85mA 28-Pin 350x550mil) 32-Pin 450x550mil) P4C1256L | |
PYA28C256Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104 | |
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Contextual Info: / ' . \ A U S T IN S E M I C O N D U C T O R . INC. AS7S512K8 512Kx8 SRAM MODULE ADVANCED FEATURES • • • • • • Access times of 17, 20, 25, 35ns O rganized as 512Kx8; Operation with single 5 volt supply Low pow er CM O S TTL Com patible Inputs and O utputs |
OCR Scan |
AS7S512K8 512Kx8 512Kx8; AS7S512K8EC20M 512Kx8-bits. AS7S512K8 MIL-STD-883, | |
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Contextual Info: PYA28HC256 HIGH SPEED 32K X 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional |
Original |
PYA28HC256 120ns 28-Pin 32-Pin 450x550 PYA28HC256 32Kx8 64-byte EEPROM106 | |
2KX8 EEPROMContextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) |
Original |
PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 EEPROM108 2KX8 EEPROM | |
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Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Fast Byte Write (200µs or 1 ms) Low Power CMOS: |
Original |
PYA28C64 350ns 28-Pin 32-Pin 450x550 PYA28C64X PYA28C64 EEPROM105 | |
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Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
PYA28C010 250ns 32-Pin 450x550 44-Pin 650x650 PYA28C010 128Kx8 | |
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Contextual Info: PYA28C64B 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28C64B 350ns 28-Pin 32-Pin 450x550 PYA28C64B 64-byte EEPROM111 | |
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Contextual Info: PYA28C010 128K X 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Low Power CMOS: |
Original |
PYA28C010 250ns 32-Pin 450x550 44-Pin 650x650 PYA28C010 128Kx8 | |
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Contextual Info: PYA28C64 X 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte Write Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs Endurance: |
Original |
PYA28C64 350ns PYA28C64X 28-Pin 32-Pin 450x550 | |
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Contextual Info: PYA28C17 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) RDY/BUSY Open Drain Output |
Original |
PYA28C17 350ns 28-Pin 32-Pin 450x550 PYA28C17 EEPROM110 | |
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Contextual Info: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O |
Original |
P4C1256L 70mA/85mA 28-Pin 350x550mil) 32-Pin 450x550mil) | |
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Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28HC256 120ns 28-Pin 32-Pin 450x550 PYA28HC256 32Kx8 64-byte devi65 | |
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Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28HC256 120ns 28-Pin 32-Pin 450x550 PYA28HC256 32Kx8 64-byte EEPROM106 | |
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Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs |
Original |
PYA28HC256 120ns 28-Pin 32-Pin 450x550 PYA28HC256 32Kx8 64-byte EEPROM106 | |
AS28C010Contextual Info: PYX28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
PYX28C010 250ns 32-Pin 450x550 PYX28C010 128Kx8 64-byte EEPROM103 AS28C010 | |
P4C1256LContextual Info: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O |
Original |
P4C1256L 70mA/85mA 28-Pin 350x550mil) 32-Pin 450x550mil) P4C1256L | |
2KX8 EEPROMContextual Info: PYA28C17 2K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms CMOS & TTL Compatible Inputs and Outputs Data Retention: 10 Years RDY/BUSY Open Drain Output Low Power CMOS: - 60 mA Active Current |
Original |
PYA28C17 350ns 28-Pin 32-Pin 450x550 PYA28C17 EEPROM110 2KX8 EEPROM | |
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Contextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional Fast Byte Write (200µs or 1 ms) Data Retention: 10 Years Low Power CMOS: - 60 mA Active Current |
Original |
PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 24-Pin EEPROM108 | |
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Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs |
Original |
PYA28C010 250ns 32-Pin 450x550 PYA28C010 128Kx8 64-byte EEPROM103 | |