450X550 Search Results

Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28C256 32K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional

PYA28C16

Abstract: eeprom
Contextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)

PYA28C64

Abstract: eeprom
Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs

P4C1256L

Contextual Info: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O

PYA28C256

Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: / ' . \ A U S T IN S E M I C O N D U C T O R . INC. AS7S512K8 512Kx8 SRAM MODULE ADVANCED FEATURES • • • • • • Access times of 17, 20, 25, 35ns O rganized as 512Kx8; Operation with single 5 volt supply Low pow er CM O S TTL Com patible Inputs and O utputs

Contextual Info: PYA28HC256 HIGH SPEED 32K X 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional

2KX8 EEPROM

Contextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)

Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Fast Byte Write (200µs or 1 ms) Low Power CMOS:

Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

Contextual Info: PYA28C64B 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28C010 128K X 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Low Power CMOS:

Contextual Info: PYA28C64 X 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte Write Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs Endurance:

Contextual Info: PYA28C17 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) RDY/BUSY Open Drain Output

Contextual Info: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

AS28C010

Contextual Info: PYX28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs

P4C1256L

Contextual Info: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O

2KX8 EEPROM

Contextual Info: PYA28C17 2K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms CMOS & TTL Compatible Inputs and Outputs Data Retention: 10 Years RDY/BUSY Open Drain Output Low Power CMOS: - 60 mA Active Current

Contextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional Fast Byte Write (200µs or 1 ms) Data Retention: 10 Years Low Power CMOS: - 60 mA Active Current

Contextual Info: PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Fully TTL Compatible Inputs and Outputs