EEPROM106 Search Results

Contextual Info: PYA28HC256 HIGH SPEED 32K X 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs