AR SC70 Search Results

hmc506

Abstract: HMC676LC3C
Contextual Info: g ra tin s Ye ar 25 Ce leb ΠInn ov ce vi y lit Πion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE

10 GHz wideband mixer

Abstract: HMC676LP3E
Contextual Info: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

FMCW Radar

Abstract: 4G lte chip modem HMC852LC3C 13600D HMC-C083 4G lte chip modem usb HMC363G8 MAV-11SM EAR99 HMC788LP2E
Contextual Info: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

2n3904 c25

Abstract: quanta u36 FB65 ZD53 zD44 HD1L ZD19 FB75 FB52 quanta computer
Contextual Info: 5 4 FB1 3 2 1 120 SCART1_VOUT C1 33P C2 NC FB3 ZD1 5.1V FB2 120 21 SCART1_PR D C5 33P C6 NC FB5 ZD3 5.1V R2 75R 120 C10 NC FB7 VIN V OUT BLNKGND V GND BLANK R DATA GND R GND DATA G CLKOUT G GND AR B AIL B GND A GND AOL AIR AOR 17 15 SCART1_Y C9 33P SHIELD

HMC734

Abstract: AG602-89 HMC807LP6CE SPI op amp mar 4sm hmc849 HMC516 HMC332 hmc783lp6ce ERA-4SM EAR99
Contextual Info: g ra tin Ye ar s 25 Ce leb Œ Inn ov ce vi y lit Œ ion Qua at ῵ᢳ ⏋ড়ֵো䲚៤⬉䏃ˈ 䲚៤ 䏃 ῵ഫˈ ഫ ᄤ㋏㒳 Ҿ㸼 㒳 Ҿ㸼 DC - 110 GHZ ≑䔺⬉ᄤ Telematics & Sensors ᆑᏺ䗮ֵ Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

Contextual Info: 2SC5090 SILIC0N NPN EPITAXIAL PLAN AR t y p e t r a n s is t o r U nit in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, High Gain. N F = l.ld B , |S2iel2 = 13dB f=lG H z M A X IM U M R ATIN G S (Ta = 25°C)

FT5754M

Abstract: FT5753M FT5769M FT5758ML FT5758M FT5763M ft5748m FT5764M FT5760M FT5761M
Contextual Info: - 312 - m % m Ta=25T , *EP(äTc=25<C ) tt m a & '•CEO (V) FT5747M HV SW/HF A (V) ici D O (A) Pc (W) Pc* (W) iCBO^ (max) lu A) V'CB .faE (max) (min) (V) «# tt Vc e (V) (Ta=25T;) [*EP(ätyp{Ü] . / (max) (V) Ic /’ Ie (A) \ t. / \ (V) le (A) -250 -250

Contextual Info: S P L C 086A 80ch Common/Segment Driver for Dot Matrix LCD NOV. 03, 2004 Version 1.0 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. is believed to be accurate and reliable. Information provided by SUNPLUS TECHNOLOGY CO.

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30

Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAS70W series PINNING FEATURES • L o w fo rw a rd v o lta g e BAS70 PIN • H igh b re a k d o w n v o lta g e • G u a rd ring p ro te c te d • V e ry s m a ll S M D p a c k a g e

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

FAN4113

Abstract: FAN4113IS5 FAN4113IS5TR3 KEB011 SC70-5 g5 Sc70-5
Contextual Info: PRELIMINARY www.fairchildsemi.com FAN4113 1.2V, 36MHz, Low Power Rail-to-Rail Amplifier Features at +1.2V Description • • • • • • • • • • • The FAN4113 is a low cost, voltage feedback amplifier that consumes only 640µA of supply current. The FAN4113 is

Contextual Info: LAST TIME BUY Closest Alternative is AP5727FDCG-7 ZXLD1601 ADJUSTABLE DC - DC BOOST CONVERTER WITH INTERNAL SWITCH IN SC70 DESCRIPTION Output voltage is set to a nom inal value betw een 26V and 28V, by an internal resistor netw ork, but can be adjusted to low er values by external resistors, an

NC7SZ3157

Abstract: SC70-6 nc7sz31 NC7SZ3157P6X
Contextual Info: Prelim inary Revised September 1999 E M I C O N D U G T O R TM NC7SZ3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer Preliminary Features • Useful in both analog and digital applications ■ Space saving SC70 6-lead surface mount package

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

RT1P242T2

Abstract: DJB 1 RT1N242X RT1P242C RT1P242M RT1P242U RT1P242X TC236
Contextual Info: Transistor RT1 P242X SERIES Transi stor WïUi Resistor For Switching Application Silicon P N P Epitaxial Type OUT Li ME DESCRIPTION R T1P242X is a DRAWING UNIT: mm irne chip tra n s is to r RT1P242U w ith b u ilt - ir bias resistor.N P N ty p e is RT1N242X

AO7401

Contextual Info: AO7401 30V P-Channel MOSFET General Description Product Summary The AO7401 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

AO7407

Contextual Info: AO7407 20V P-Channel MOSFET General Description Product Summary The AO7407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

AO7405

Abstract: SC706
Contextual Info: AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

Contextual Info: AO7411 20V P-Channel MOSFET General Description Product Summary The AO7411 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M o to rola P referred D e v ice s This new series of digital transistors is designed to replace a single device and its

FP6138

Abstract: sot23 28c5g FP6138-12C5P SC-82 SC-82-4 FP6138-33C5G FP6138-28C5G FP6138-12S5G fp6138-33wdg 12c8
Contextual Info: FP6138 fitipower integrated technology lnc. 150mA Low Noise High PSRR LDO with Shutdown Description The FP6138 is a low dropout, low noise, high PSRR, very low quiescent current positive linear regulator. The FP6138 can supply 150mA output current with low dropout voltage at about 230mV

2SA2009

Contextual Info: Transistors 2SA2009 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High collector to emitter voltage VCEO • Low noise voltage NV