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    APT33GF120HR Search Results

    APT33GF120HR Datasheets (1)

    Advanced Power Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT33GF120HR
    		Advanced Power Technology Fast IGBT Original PDF 25.56KB 2

    APT33GF120HR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC LM 258

    Abstract: TL176 125c66
    Contextual Info: APT33GF120HR 1200V Fast IGBT 38A TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop


    Original     		apt33gf120hro-25820khz66vces+4mil-std-750ic lm 258tl176125c66 PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		mil-prf-19500iso90015017bvr40814+85020bn1431 tapt5010lvrapt1001rblcapt10050apt30m85bvrapt5020blcapt2x101d60 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		mil-prf-19500iso9001apt6015lvr5020bn+8apt6011lvfrarf4505017bvrapt2*61d120jfredfetsapt8015jvrapt100gf60lrapt5014lvr PDF

    600V1200V

    Contextual Info: PRODUCTS - IGBTs IGBT Technology . Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. APT’s construction provides the optimal tradeoff between VCE SAT , switching speed, and ruggedness.


    Original     		40khz150khz300khz00v-1200v+70a-50ao-254o-258apt20gt60arapt30gt60arapt50gf60ar600v1200v PDF