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    TL176 Search Results

    TL176 Datasheets (2)

    Texas Instruments
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TL176C
    Texas Instruments Normally Off Silicon Hall Effect Switch Original PDF 66.51KB 2
    TL176CLP
    Texas Instruments Normally Off Silicon Hall Effect Switch Original PDF 66.51KB 2
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    TL176 Price and Stock

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    Honeywell Sensing and Control 1TL176-3

    Toggle Switches TOGGLE SW SPDT 2POS SCRW TERM STD LVR
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    Mouser Electronics 1TL176-3 11
    • 1 $76.12
    • 10 $75.04
    • 100 $62.63
    • 1000 $62.63
    • 10000 $62.63
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    RS 1TL176-3 Bulk 29 Weeks 50
    • 1 -
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    • 100 $88.31
    • 1000 $77.71
    • 10000 $77.71
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    TTI 1TL176-3 Bulk 1 1
    • 1 $68.42
    • 10 $65.16
    • 100 $62.63
    • 1000 $62.63
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    Master Electronics 1TL176-3
    • 1 -
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    • 100 $52.01
    • 1000 $52.01
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    Honeywell Sensing and Control 1TL1763

    Sealed Oi Switch; |Honeywell 1TL1763
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    Newark 1TL1763 Bulk 50
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    MIL-SPEC Miscellaneous MIL-DTL-17667 TY.2

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    Bisco Industries MIL-DTL-17667 TY.2 1
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    Honeywell Sensing and Control / MICRO SWITCH 1TL176-3

    Toggle Switches TOGGLE SW SPDT 2POS SCRW TERM STD LVR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager 1TL176-3 1
    • 1 $60.66
    • 10 $57.38
    • 100 $52.42
    • 1000 $52.42
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    Southco TL-17-601-07

    Southcos Over-Center Series Latches provide a mechanical advantage through lever actuated over-center action that pulls panels together and holds them secure.
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    DB Roberts TL-17-601-07
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    TL176 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output


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    tl176c PDF

    TESLA transistor

    Abstract: magnetic flux density for different material TESLA Manufacturer 106B TL176C tesla switch
    Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • O n-O ff Hysteresis • Small Size • Solid-State Technology •


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    tl176ctesla transistormagnetic flux density for different materialtesla manufacturer+2106btesla switch PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    ptma080304m20-leadpg-dso-20-63tl272+9tl184tl181tl271tl308tl187 transistortl274tl293tl193tl148 PDF

    TLP596A

    Abstract: TLP596B TLP176D TLP176G TLP197G TLP200D TLP206A TLP270D TLP270G TLP3110
    Contextual Info: [ 7 ] エンボステーピング包装仕様 [ 7 ] エンボステーピング包装仕様 面実装用リードフォーミング, 面実装用リードフォーミング エンボステーピング包装仕様 1. パッケージ分類 テーピング名称


    Original
    tlp3110tlp3111tlp270dtlp270g+954soptl176atlp176dtlp176gtlp197gtlp200dtlp596atlp596btlp206a PDF

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    ptma080304m20-leadpg-dso-20-63transistor c124+9tl184tl272tl271tl181tl279tl298tl168tl308tl300 PDF

    Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original
    ptfb183408sv340-watt PDF

    Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original
    ptfb183408sv340-watt PDF

    TL306

    Abstract: TL184 TL167 TL307
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    ptma080304m20-leadpg-dso-20-6396stances+4tl306tl184tl167tl307 PDF

    UAF771

    Abstract: SN75494N RC555DN SN75450BN CA555CG SN75492AN MC1709CL SN75491AN SN75493N SN75469J
    Contextual Info: Linear C irc u its C r o s s R e fe re n ce G u id e D EV ICE TYPE 1458E 1458P 1488DC 1 4 8 8 PC 1489ADC 1489APC 1489DC 1489PC 1558E 55107ADM 55107BDM 55108ADM 55108BDM 55109DM 5 5 1 10DM 551 21 D M 55122DM 55207DM 55208DM 55224DM 55225DM 55232DM 55233DM 55234DM


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    1458e1458p1488dc1489adc+161489apc1489dc1489pc1558e55107adm55107bdmuaf771sn75494nrc555dnsn75450bnca555cgsn75492anmc1709clsn75491ansn75493nsn75469j PDF