APT 5060 Search Results

APT5010

Abstract: LD 1170
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT5010JN APT5012JN S ISOTOP 500V 500V 48.0A 0.1 Oí2 43.0A 0.1 2Ü. "UL Recognized" File No. E145592 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol APT 5010UN APT

Contextual Info: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT 50M60JN

Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

APT60GF120JRDQ3

Abstract: APT10035LLL
Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

d 6283 ic

Abstract: APT10035LLL APT50GF120JRDQ3
Contextual Info: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

igbt 800v 80a

Contextual Info: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

Contextual Info: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT 5060

Contextual Info: 2 2 3 3 1 1 7 22 OT 4 S 4 Parallel APT2X31S20J APT2X31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

APT2X30S20J

Abstract: APT2X31S20J H100 APT 5060
Contextual Info: 2 3 2 2 3 1 1 4 1 Anti-Parallel 3 7 22 OT 4 S 4 Parallel APT2X30/31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

APT 5060

Contextual Info: 2 2 3 3 1 1 7 22 OT 4 S 4 Parallel APT2X31S20J APT2X30/31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

40m90

Contextual Info: A dvanced P o w er T e c h n o lo g y APT40M75JN 400V 56.0A 0.075Í2 APT40M90JN 400V 51.0A 0.090Í2 ISOTOP S Ù " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

8030JN

Contextual Info: A dvanced P o w er Te c h n o l o g y APT8030JN APT8035JN O s ISOTOP* 800V 27.0A 0.30Q 800V 25.0A 0.35Q "UL Recognized" File No. E145592 S POWER MOS IVe S IN G L E DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

100pf,63v ceramic capacitor

Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
Contextual Info: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the

281006

Abstract: 62306-2 62381 505075-1 bellmouth adjustment for applicators TERMINAL CRIMPING -GOLD 62040-2 general maintenance for applicators 62310 1217384-1 62304-2
Contextual Info: Catalog 82221 Magnet Wire Terminals and Termination Systems Revised 10-02 AMPLIVAR Splices Product Facts • Compression crimp eliminates cold solder points, weld burns and wire embrittlement usually connected with thermal-type terminations ■ Excellent tensile strength—

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT8030JN APT8035JN ISOTOP' 800V 800V 27.0A 0.30Í2 25.0A 0.35Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: •R F j M AD VA NC ED po w er T e c h n o lo g y APT6015JN APT6018JN ISOTOP' 600V 600V 38.0A 0.15Í2 35.0A 0.18Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5020

Abstract: APT5020JN APT5020JN APT
Contextual Info: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE

Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X30D30J 3 4 2 1 3 4 SO Parallel APT2X31D30J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X31D30J APT2X30D30J 300V 300V 30A 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES PRODUCT APPLICATIONS

Contextual Info: A dvanced P o w er Te c h n o l o g y * Q D APT6015JN APT6018JN O S ISOTOP* 600V 600V 38.0A 0.15Í2 35.0A 0.18Q "UL Recognized" File No. E145592 S POWER MOS IVe P ÏÏ= IE ï# T T 51 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 SO Parallel APT2X61D120J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES