APM28 Search Results

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

GEM2928

Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET • NC C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

APM2803

Abstract: APM2803CG STD-020C
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2800B

Abstract: STD-020C SOT-23-5 MARKING VF
Contextual Info: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)

APM2802CG

Abstract: APM2802
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET D NC • C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Top View of JSOT-6 Reliable and Rugged

MARKING B4 SOT-25

Abstract: SOT-23-5 MARKING VF APM2801B STD-020C mosfet b4 C145M
Contextual Info: APM2801B P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • -20V/-1.5A , RDS ON =145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged

DIODE marking S4 23a

Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D

STD-020C

Abstract: APM2803 APM2803CG
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2802CG

Abstract: APM2802 STD-020C
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • C 20V/3A, RDS ON =50mΩ(typ.) @ VGS=4.5V G S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2807QB

Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)

M2805

Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.

circuit diagram mtk

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide completed Li+ charger protections against over-voltage, over-current, and battery over-

APL3212

Abstract: Q1/Charger
Contextual Info: APL3212A/B/C Li+ Charger Protection IC Features General Description • Provide Input Over-Voltage Protection The APL3212A/B/C provide complete Li+ charger protec- • Programmable Input Over-Current Protection • Battery Over-Voltage 4.35V/4.435V Protection

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide completed Li+ charger protections against over-voltage, over-current, and battery over-

4435 mosfet

Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Contextual Info: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展

architecture of intel 80487

Abstract: 80487 architecture 80487 block diagram of 80487 pin diagram of 80487 architecture of 80487 80487 math coprocessor block diagram of intel 80487 architecture diagram of intel 80487 intel 80487
Contextual Info: D Pentium Processor Family Developer’s Manual Volume 3: Architecture and Programming Manual NOTE: The Pentium® Processor Family Developer’s Manual consists of three books: Pentium® Processor Order Number 241428; the 82496/82497/82498 Cache Controller and 82491/82492/82493 Cache

APL3205B

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide complete Li+ charger protections against over-voltage, over-current, and battery over-