JESD-22
Abstract: A108 APM9984C APM9984CCG B102 GEM2928
Contextual Info: APM9984CCG N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/6A, RDS ON =16mΩ(typ.) @ VGS=4.5V G2 S2 G1 S1 RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM
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APM9926C
Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
Contextual Info: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available
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APM2901CG
Abstract: GEM2928 APM2901 diode MARKING CODE CG M2901
Contextual Info: APM2901CG P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-10A, D RDS ON = 9mΩ(typ.) @ VGS= -4.5V D D D G S S RDS(ON)= 12.5mΩ(typ.) @ VGS= -2.5V S RDS(ON)= 18mΩ(typ.) @ VGS= -1.8V • • • Super High Dense Cell Design Top View of JSOT-8
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apm2901cg-20v/-10agem2928apm2901+2diode marking code cgm2901
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SSFN2316E
Abstract: GEM2928 "battery protection" GEM2928-8L
Contextual Info: SSFN2316E GENERAL FEATURES ● VDS = 20V,ID = 6.5A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired
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ssfn2316erating2000vgem2928-8ln2316e+325unlessgem2928battery protection
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