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    APM2803

    Abstract: APM2803CG STD-020C
    Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6


    Original
    apm2803cg-20v/-1apm2803std-020c PDF

    STD-020C

    Abstract: APM2803 APM2803CG
    Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6


    Original
    apm2803cg-20v/-1mil-std-883d-2003883d-1005+4jesd-22-b883d-1011std-020capm2803 PDF