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AOT1N60 Datasheets (1)

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Alpha & Omega Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AOT1N60		Alpha & Omega Semiconductor	High Voltage - 600V, 1.3A N-Channel MOSFET	Original	PDF	131.25KB	5

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Alpha & Omega Semiconductor


Alpha & Omega Semiconductor AOT1N60 Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220
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AOT1N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AOT1N60 Contextual Info: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss	Original	aot1n60 o-220	PDF
AOT1N60 Contextual Info: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss	Original	aot1n60 o-220	PDF
Contextual Info: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss	Original	aot1n60 aot1n60l o-220	PDF
AOT1N60 Abstract: AOT9600 AOTF Contextual Info: AOT1N60 1.3A, 600V N-Channel MOSFET formerly engineering part number AOT9600 General Description Features The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.	Original	aot1n60 aot9600 o-220 aotf	PDF
Contextual Info: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss	Original	aot1n60 aot1n60l	PDF
AON6704L Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower	Original	o-252 o-263 msop-10 sc70-3 +16sc70-6 sc-89-3 sc-89-6 od523 od923 ot23-3 aon6704l aoz1094 aoz1094ai aon7403 aoz1242 aoz1014ai aoz1212ai aoz1361 aon6414al aoz1025	PDF
AOT8N60 Abstract: AOTF8N60 Contextual Info: AOT8N60 / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description Features The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance	Original	aot8n60 aotf8n60 aot9606/aotf9606 o-220 +1o-220f	PDF
MOSFETs Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet Contextual Info: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship	Original	mosfets n mosfet 100v 500a uis test ao4468 +4for bipolar junction diode used for mosfet cross aot1n60 high voltage mosfet	PDF