AOT 127 Search Results

AOT-0603P-B01A

Abstract: AOT-0603P-B01AZ AOT0603P-B01-V 10E10 10E4 10E6 10E8 3050B aot-0603p diode 47-16
Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED : Blue Color AOT-0603P-B01AZ General Customer 2005/June 2 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,

AOT 127A

Abstract: aot 127 aot 128 AOT474 AOTF474
Contextual Info: AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOT F 474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent

aot 127

Abstract: brc 300 abb AIN-300 rmu abb AIN-220 WBPEEUD240004 AIN-120 WBPEEUD240002 L type thermocouple conversion table AOT-150
Contextual Info: ControlIT Data Sheet Harmony Analog I/O TC00892A Description The Harmony Input/Output I/O System utilizes a variety of input and output blocks to interface process signals to the Symphony Enterprise Management and Control System. Analog input (AIN) blocks interface field inputs such as pressure and flow transmitter signals, thermocouple (TC) inputs, and resistive temperature device (RTD) inputs. Analog output (AOT) blocks

Contextual Info: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOT25S65

Contextual Info: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: active Frequency Mixers LOAD INSENSITIVE UNCL-X1 + 7 dBm LO, up to + 1 dBm RF UNCL-X1MH ( + 13 dBm LO, up to + 7 dBm RF) case style selection o u tlin e d ra w in g s s e e T ab le o f C o n te n ts U N C L -X U N C L -X 'IM H FREQUENCY M Hz MODEL NO. L O /R F

toshiba tlc 711

Abstract: aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017
Contextual Info: TOSHIBA INTEGRATED CIRCUIT CMOS D ie ;T A « TC 3 5 1 8 0 F T E C H N IC A L D A T A TC35190F • = ¡VTEC3ATED C : S C. SILICON MONOLITHIC Video-data Coepretslon and E»panslon C o n tro lle r* ) 1988-1 1*03 DESCRIPTION TC35190F ( VCEC ) p e rfo ri* ercoJ.RC m i decodins

Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter A re a SFH 317 SFH 317 F n o t f la t £ o> E 'l 1“ "! Q- _1C*J t/i — * 5 .5 — i 5'11

TDA 4400

Abstract: TDA4400 4410 Demodulator 4410 8 pin TC 4410 TDA4410 tda video
Contextual Info: TDA 4400 • TDA 4410 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendungen: Bild-ZF-Verstärker für Farb- und Schwarz-Weiß-Fernsehempfänger TDA 4400 bei PNP-Tunern TDA 4410 bei NPN-Tunern Applications: Video IF-amplifier for colour and monochrome television receivers.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UN • • • • n x c K ic o n Chip Type, Bi-Polarized, Higher Capacitance Range pip For SMD Bi-polanzed Chip Type,higher capacitance in larger case sizes ^12.5, (616, ^18, ^20 Designed for surface mounting on high density PC board.

Contextual Info: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications

Contextual Info: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard

VOGT p8

Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und

LA4070

Abstract: 2WAY AS10 AS11 AS12 DIP30S LA2800N
Contextual Info: SANYO SEMICONDUCTOR. 15E CORP » I 7 T T 7 -0 7 ti ODOBOSâ T7S-07-I5' LA2800N: M o n o lith ic L in ea r IC 3061 Telephone A n sw e rin g M a ch in e 2572 • ' General Description The LA2800N is a telephone answering machine-use bipolar IC that performs the

eg2801s

Abstract: EG2401S-ar 40H004 EG4401S-AR EG2401S EG2201S-AR epson e-1330 EG4801S-AR eg2401 eg-2401s
Contextual Info: 07-DEZ-1999 09:47 UON:EPSON EUROPE GMBH +49 S9 14005117 AN:41S SPECIFICATIONS FOR 1/64 MULTIPLEXING LÇET MO! EG2201.S-AR 1. EG2401S-A EG2601.S-AR 64 dots EG4401S-AR (256 xl28 dots) EG4801.S-AR (512 xl28 dots) JULY 2, 1986 SEIKO EPSON CORPORATION S. 00l7035

nas 1791

Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
Contextual Info: ' — INTEGRATED CIRCUIT T08H IBA cmcs d ;c ;ta_ in teg r a te : TC 3 5 1 9 0 F T E C H N IC A L D A T A TC35190F SILICON V i d e o - d a t a C o e o r e s s l o n and E » p a n * l o n C o n t r o l l e r * of video-data ( VCEC 1988-11*03 . . . DESCRIPTION

Contextual Info: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

HY51V17404A

Abstract: HY51V17404AJ60 00045n
Contextual Info: HY51V17404A Series • H Y U N D A I 4 M X 4-b it CMOS DRAM W ith Extended Data O ut DESCRIPTION The HY51V17404Aisthe new generation andfast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

BR9041ARF

Abstract: BF190
Contextual Info: BR9041A / BR9041ARF 2 5 6 X 1 6 B i t '> U 7 l/E E P R O M B R 9 0 4 1 A 2 5 6 X 1 6 B it S e r ia l EEPROM B R 9 0 4 1 A R F • >£Hi/Dimensions Unit : mm) BR9041A/ARF(i, 4096t'-y h (2561 7 - K 'x i6 t" 'y h) 5 "T 7 °(7 5 y iU (EEPROM) T -fo S lfF ^ > I' □ - M i ,

PMB2307

Contextual Info: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current

TC59WM803BFT

Abstract: THMD1GE2SB70
Contextual Info: TOSHIBA THMD1GE2SB70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD1GE2SB is a 134,217,728-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 36 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.

Asrock

Abstract: amd RADEON e6760 2010 PC intel MOTHERBOARD SERVICE MANUAL motherboard asrock HD3000 nm10 MOTHERBOARD SERVICE MANUAL
Contextual Info: Industrial computing solutions Digital Signage Fanless Box PCs Panel PCs Embedded Boards Displays www.microdis.net 1 Industrial computers as the best choice INDUSTRIAL COMPUTER DESIGN Operating time: 24h/7days a week Low power consumption Highest reliability,

Contextual Info: Tfi MICRON TE CHN OLOGY INC 6111549 MICRON TECHNOLOGY INC DE^blllSMI 68C 00060 OOQOGtaO T D T-41-55 IICRON TECHNOLOGY, INC. 655,360 Element Solid-State Image Sensor SYSTEMS GROUP 1447 Tyrell Lane Boise, Idaho 83706 208 386-3800 I TWX 910-970-5973 FEATURES