Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1MX64BIT Search Results

    1MX64BIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M5M4V18165CJ

    Abstract: MITSUBISHI date code mitsubishi date year M5M4V18165C mitsubishi assembly year mitsubishi Manufacturing year mitsubishi year code 1048576bit DRAM
    Contextual Info: MITSUBISHI LSIs Preliminary Spec. MH1V645CWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard


    Original
    mh1v645cwxpj-64194304-bit1048576-bit64-bit+121mx64bit1048576-wordmit-ds-0030-124/marm5m4v18165cjmitsubishi date codemitsubishi date yearm5m4v18165cmitsubishi assembly yearmitsubishi manufacturing yearmitsubishi year code1048576bit dram PDF

    Contextual Info: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard


    OCR Scan
    v645c4194304-bit1048576-bit64-bit+41mx64bit1048576-wordmit-ds-0030-124/mar PDF

    ADQ37

    Contextual Info: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung


    OCR Scan
    kmm466f104bt1-lkmm466f124bt1-l466f104bt1-l1mx16+5kmm466f101mx64bits1mx16bits400miladq37 PDF

    HY51V18164B

    Abstract: HY51V18164
    Contextual Info: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy


    Original
    hym5v64124a1mx64-bit64-bithy51v18164b+5hym5v64124aqg/atqg/aslqg/asltqgdq0-dq631ce16-10-apr96144pinhy51v18164 PDF

    Contextual Info: DRAM MODULE Revision History Version 0.0 June 1998 • The 4th. generation of 16M DRAM components are applied for this module. KMM466F104CT1-L KMM466F124CT1-L KMM466F104CT1-L KMM466F124CT1-L DRAM MODULE KMM466F104CT1-L & KMM466F124CT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh


    Original
    kmm466f104ct1-lkmm466f124ct1-l1mx16kmm466f10+11mx64bits PDF

    HY51V18164

    Contextual Info: • ' M Y U H D A I — • H Y M 5 V 6 4 1 2 4 A Q - S e r ie s SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin S O J or 44/50 pin TSO PII and one 2048 bit EEPRO M on a 144 Zig Zag Dual pin glass-epoxy


    OCR Scan
    1mx64-bithym5v64124a64-bithy51v18164b+7hym5v64124aqg/atqg/aslqg/asltqg1mx64-blthym5v64124aqghym5v64124aslqghym6v64124atqghym5vs4124asltqghy51v18164 PDF