AO4468 AOS Search Results

AO4468

Contextual Info: AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4468L

Abstract: 116a
Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated

AO4468

Abstract: AO4468L AO4468 AOS 116A
Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated

AO4468

Contextual Info: AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4468

Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

ao4468

Abstract: AO4468L
Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated

Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated

AO4468

Abstract: rgte
Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

Contextual Info: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

MOSFETs

Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet
Contextual Info: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship

Contextual Info: Single N-channel MOSFET ELM14468AA-N •General description ■Features ELM14468AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11.6A (Vgs=10V) Rds(on) < 14mΩ (Vgs=10V)

L50RIO

Abstract: 37GL53010-C1 L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468
Contextual Info: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53010-C1 D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 PG20 PG21 PG22 PG23 PG24 PG25 PG26 PG27 PG28

Contextual Info: シングル N チャンネル MOSFET ELM14468AA-N •概要 ■特長 ELM14468AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=11.6A Vgs=10V ・ Rds(on) < 14mΩ (Vgs=10V)

ELM14468AA

Abstract: 116a
Contextual Info: 单 N 沟道 MOSFET ELM14468AA-N •概要 ■特点 ELM14468AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=11.6A Vgs=10V ·Rds(on) < 14mΩ (Vgs=10V) ·Rds(on) < 22mΩ (Vgs=4.5V) ■绝对最大额定值

r305 finger print module

Abstract: JMB363 JMB362 37GP55000-C0 rqa130n03 rqa130 ICS9LPR365 Sil3531 QT1608RL600HC C926A
Contextual Info: 5 4 3 2 Model : P75/55IMx 1 Revision History 08/2006 D Intel Merom CPU + PM965 + ICH8-M Chipset Santa Rosa plantfrom No supported AMT Initial Rev.RA 09/2006 Rev.A1 11/2006 Rev.A2 01/2007 Rev.B 03/2007 Rev.C D PCB P/N: 37GP55000-C0 PCBA P/N: 82GP55000-C0

rqw200n03

Abstract: 37GL53010-C1 L50RIO ITE8512E RQW200 L53II6 pll gl960 gl960 HCB1608KF-600T30 rqw130
Contextual Info: 5 Model : L53II6 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53080-C1F D D Intel Merom CPU + GL960 + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

ITE8512E

Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
Contextual Info: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

37GP55000-C0

Abstract: JMB362 QT1608RL600HC Uniwill P55IMX Sil3531 jmb363 55im ITE8512E rqa130n03 P55IM
Contextual Info: 5 4 3 2 Model : P75/55IMx 1 Revision History 08/2006 D Intel Merom CPU + PM965 + ICH8-M Chipset Santa Rosa plantfrom No supported AMT Initial Rev.RA 09/2006 Rev.A1 11/2006 Rev.A2 01/2007 Rev.B 03/2007 Rev.C D PCB P/N: 37GP55000-C0 PCBA P/N: 82GP55000-C0

AO4946

Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
Contextual Info: NEW! MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Alpha and Omega Semiconductor AOS has a portfolio of approximately 400 products making AOS a well known, high volume, global supplier of Power MOSFETs. This diverse product range includes both N and P

C1470 LM

Abstract: se u10i layout RTS5158 bga676 zd801 RTL8101E-GR PM965 hy5rs123235b W651DI R1287
Contextual Info: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON ON OFF

RTS5158

Abstract: northbridge G41 se u10i layout GM965 28K1 IC NS0013 sla5t bga676 rtl8010 C1087
Contextual Info: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 GM965/PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON

FBMA-L11-201209-221LMA30T

Abstract: ATI-RS690M LA-3611P LA3611 ISL6251 KB926QFA1 MAX8774GTL kb926 si7686 compal
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 Schematics Document AMD S1/ ATI RS690MC / SB600 2007 / 4 / 10 Rev:0.4 3 3 4 4 Compal Secret Data Security Classification Issued Date 2007/1/25 2008/01/25 Deciphered Date Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

kb3310qf c1

Abstract: KB3310QF mmc ga201 KB3310 kb3310qf b0 quanta at2 KB3310QF-B0 AOZ1021 quanta at1 quanta
Contextual Info: 5 D 4 VTERM +0.9V VTT(+1.05V) +1.5VSUS +1.5V +1.8VMEM +1.8V +2.5V 3VPCU +3.3V +3.3VSUS LCD_3.3V LCD_5V +5V 3 2 IL1 Block Diagram B -> C 2008-01-08 VID[0:6] C7-M (ULV) VCORE:+1.196 ~ +0.748 VCCP:+1.05V VCCA:+1.8V or +1.5V +/- CPU_CLK +/- HCLK CRT 256M/512M/1GB