ANNULAR ANODE Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR102 MCR103 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,

2N5064

Abstract: 2N5062 2N5061 2n5060 thyristor
Contextual Info: MOTOROLA O rder this docum ent by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 2N5062* 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors ‘ M otorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as

2N5061

Abstract: 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
Contextual Info: MOTOROLA Order this document by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as

motorola thyristor

Abstract: T30 motorola Motorola Thyristor Device Data MCR202 MCR203 MCR204 MCR206 motorola reverse blocking triode thyristor
Contextual Info: MOTOROLA SC 6367255 -CDIODES/OPTODMOTOROLA SC 01 <DIODES/OPTO DE|b3b7SSS OIE 79160 0D7TlbD D & MCR202 thru Silicon Controlled Rectifiers MCR206 Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay

MCR407-4

Abstract: MCR407-1 MCr407 "case 90-05" "Silicon Controlled Rectifiers" 35 amp speed control torque control CASE 90-05
Contextual Info: MCR407-1 silicon thru MCR407-4 — H*2 THYRISTO RS 4.0 AMPERES RMS 30 thru 200 VOLTS PLASTIC SILICON CO NTRO LLED RECTIFIERS . . . Annular PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process

2N5060 equivalent

Abstract: 2N5064 equivalent 2N5062 equivalent 2N5061 equivalent scr 2N5064 equivalent EQUIVALENT 2N5064 2N5060 scr 2N5061 equivalent SCR 2N5060 2n5060 SCR
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

Contextual Info: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

MCR102

Abstract: TO226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR102 MCR103 Silicon Controlled R ectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,

2N5064G

Abstract: 2n5060 SCR 2N5060 2N5060G SCR 2N5060 applications
Contextual Info: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5060 equivalent

Abstract: 2N5064 equivalent 2N5062 equivalent EQUIVALENT 2N5064 2N5061 equivalent scr 2N5064 equivalent
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

SCR 2N5060

Abstract: SCR 2N5061 scr 2N5062 2N5060-D 2n5062 VAK marking 2N5060 2N5060RLRA 2N5060RLRM 2N5061
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5060

Abstract: 2n5062 free SCR 2N5060 SCR 2N5060 applications
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2n5064g

Abstract: 2N5061 2N5060G 2N5062 scr 2N5062 SCR 2N5060 2N5064RLRAG 2N5060 2N5060RLRA 2N5060RLRM
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5060 equivalent

Abstract: SCR 2N5060 SCR 2N5060 applications 2N5064 equivalent 2N5060 2N5062 equivalent scr 2N5062 SCR 2N5061 2N5061 equivalent 2N5061
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

SCR 2N5060 applications

Abstract: 2n5060 SCR 2N5060 2N5061G 102c marking 2n5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5060

Abstract: SCR 2N5060 applications SCR 2N5060 2n5062 free 2n5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5060

Abstract: SCR 2N5060 2N5060G SCR 2N5060 applications scr 2N5064 equivalent asme y14.5m to-92 VAK marking 2N5060RLRA 2n5062 free 2N5060RLRM
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

ABB thyristor 5

Abstract: 5SGA20H4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB thyristor 5

Abstract: cosmic GTO thyristor ABB 30J250
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

MCR102

Abstract: MCR103 to-226aa motorola reverse blocking triode thyristor
Contextual Info: MOTOROLA Order this document by MCR102/D SEMICONDUCTOR TECHNICAL DATA MCR102 MCR103 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,

MCR104

Abstract: MCR102 MCR101 MCR103 oo19
Contextual Info: MCRlOl SILICON thru MCR104 • » PLASTIC SILICON CONTROLLED RECTIFIERS 0.8 A M PER E RMS 15 thru 100 V O LTS PLASTIC THYRISTORS . . . Annular PNPN devices designed for low cost, high volume con­ sumer applications such as relay and lamp drivers, small motor

20H2501

Abstract: 5sga20h2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode

2N5062

Abstract: 2N5061 2n5060 thyristor 2N5064 2N506 EB-30 2N5060 motorola reverse blocking triode thyristor To92 thyristor motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 5060 2N 5061 2N 5062* 2N 5064 * Silicon C ontrolled R e c tifie rs Reverse Blocking Triode Thyristors •Motorola preferred devices . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, smali motor controls, gate drivers for larger thyristors, and

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode