abb press-pack igbt
Abstract: 20H2501 IGBT abb stakpak EN-50124
Contextual Info: V CE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNR 20H2501 PRELIMINARY Doc. No. 5SYA1582-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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20h25015sya1582-03ch-5600abb press-pack igbt+2igbt abb stakpaken-50124
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gto 5sga
Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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20h2501ch-5600gto 5sgagto thyristor abb+5abb thyristorabb thyristor 5gto gate drive circuitabb 5sgaabb 5sga 20h2501
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20H2501
Abstract: 5sga20h2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode
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20h25015sya1205-01ch-56005sga20h2501 |
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EN-50124
Abstract: EN50124
Contextual Info: V RRM = IF = 2500 V 2000 A ABB StakPak H Series Press-pack Diode 5SLF 20H2501 Doc. No. 5SYA1584-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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20h25015sya1584-03ch-5600en-50124+1en50124
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GTO Snubber Capacitor
Contextual Info: Key Parameters VDRM = 2500 ITGQM = 2000 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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20h2501ch-5600gto snubber capacitor |
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5SDF01R2501
Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes
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01r250105d250115f250220h2501+925h250130j250120h450211f250103d45015sdf01r25015sga5sga30j2501rtk 031
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SG600EX21
Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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ds5549ds5549-11501-25a01dg406bp25+152001-25a01dg646bh252003-45a01dg648bh452501-25a01sg600ex21sg600r21fg2000dv-90fg2000dv90westcode cross referencesg1000r23sg1000ex23fg1000ahsg700ex22dg406bp18
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abb press-pack igbt
Abstract: MM236 IGBT abb stakpak 16UM-5 EN50124-1
Contextual Info: V CE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNR 13H2501 PRELIMINARY Doc. No. 5SYA1517-03 Mar. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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13h25015sya1517-0320h2501ch-5600+5abb press-pack igbtmm236igbt abb stakpak16um-5en50124-1
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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15f250205d250101r250120h2501+1211f250125h2501abb 5sga2sh25gto abbgto gate drive unit2sh2501tjm 105sga 20h2501abb gtor25015sga 15f2502
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05D2500
Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.
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15f25025d25dq01r250120h2501+1305d250011f250001r25d125h25c1gto abbgto gate drive unitabb gto gate unitabb gto30l250125h250105d2505sdfgto 6.5 kv
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abb press-pack igbt
Abstract: MM236
Contextual Info: V CE IC = = 2500 V 1000 A ABB StakPak H Series Press-pack IGBT 5SNR 10H2501 PRELIMINARY Doc. No. 5SYA1580-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package
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10h25015sya1580-0320h2501ch-5600+2abb press-pack igbtmm236
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Gate Turn-off Thyristor
Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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ds5549-21501-25a01dg406bp252001-25a01+15dg646bh252003-45a01dg648bh452501-25a013001-25a01gate turn-off thyristorsg1000r23westcode cross referencesg1000ex23sg600ex21sg700ex22sg800ex21 equivalentfg2000dv90fg2000dv-90dadg406bp18
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