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Samtec Inc


Samtec Inc FFSD-05-D-25.01-01-N - Bulk (Alt: FFSD-05-D-25.01-01-N)
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Avnet Americas	FFSD-05-D-25.01-01-N	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FFSD-05-D-25.01-01-N					1 $17.67 10 $15.77 100 $10.94 1000 $8.01 10000 $8.01	Buy Now
Sager	FFSD-05-D-25.01-01-N					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc HCSD-05-D-25.01-01-N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HCSD-05-D-25.01-01-N					1 - 10 $9.88 100 $7.88 1000 $5.77 10000 $5.77	Buy Now

05D2501 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters	Original	05D2501 CH-5600	PDF
Contextual Info: Key Parameters VRRM = 2500 IFAVM = 490 IFRMS = 770 IFSM = 8.5 VF0 = 1.40 rF = 0.52 VDClink = 1100 V A A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 July 98 Features •Patented free-floating silicon technology •Low switching losses	Original	05D2501 CH-5600	PDF
KA 490 Abstract: 85103 DIODE Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO	Original	05D2501 5SYA1112-03 CH-5600 KA 490 85103 DIODE	PDF
ABB Semiconductors Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters	Original	05D2501 5SYA1112-03 CH-5600 ABB Semiconductors	PDF
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031	PDF
ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502	PDF
FSV 052 Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.	OCR Scan	05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052	PDF