5SDF Search Results

diode fr 307

Abstract: 5SDF0131Z0400 ABB 12 30 01 ABB 14 11 09 DC-20000
Contextual Info: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 435 16 2.42 2.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05F4502 Doc. No. 5SYA1151-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

11f250

Abstract: 11f25 22106
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA1113-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters

Contextual Info: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

Contextual Info: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000

Contextual Info: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT

Contextual Info: PRELIMINARY 5SDF 90Z0400 5SDF 90Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

COSMIC

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 920 IFRMS = 1440 IFSM = 25 VF0 = 1.6 rF = 1.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115- 01 July 98 Features • Patented free-floating silicon technology

5SDF11F2501

Abstract: S2200
Contextual Info: Key Parameters VRRM = 2500 IFAVM = 950 IFRMS = 1500 IFSM = 21 VF0 = 1.20 rF = 0.38 VDClink = 1500 V A A kA V mΩ V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA 1113-04 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

A140

Abstract: B140 C140 VF140 VF25
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ Ω V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 Nov. 03 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating

5SDF11F2501

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V Fast Recovery Diode 5SDF 11F2501 mΩ V Doc. No. 5SYA 1113-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters

RCD snubber

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 900 16 1.8 0.9 2400 V A kA V Fast Recovery Diode 5SDF 07H4501 mΩ V Doc. No. 5SYA 1111-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as large-area snubber diode in GTO converters

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

5SDF 90Z0401

Contextual Info: PRELIMINARY 5SDF 90Z0401 5SDF 90Z0401 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: 5SDF01R2503 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current110 V(RRM)(V) Rep.Pk.Rev. Voltage2.5k t(rr) Max.(s) Rev.Rec. Time2.8 @I(F) (A) (Test Condition) @I(R) (A) (Test Condition)140 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

A140

Abstract: B140 C140 VF140 VF25 5SDF kn 18
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating

5SDF28L4520

Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing  Cosmic radiation withstand rating  Optimized low on-state

5SDF06D2504

Abstract: abb 800
Contextual Info: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196