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    06D2504 Search Results

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    06D2504 Price and Stock

    Vishay Draloric

    Vishay Draloric CR1206D2504K7JS

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    Chip 1 Exchange CR1206D2504K7JS 15,970
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    06D2504 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5SDF06D2504

    Abstract: abb 800
    Contextual Info: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original
    06d25041768/138adm/267/08aaug-11+306d250a5sdf06d2504abb 800 PDF

    5SGS 12F2500

    Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
    Contextual Info: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630


    Original
    12f25001768/138atg/164/05bmar-12+45sgs 12f2500abb typ rgcitgqmgto thyristor abb PDF

    Thyristor snubber

    Contextual Info: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000


    Original
    12f300012f25001768/138atg/164/05+2jul-10thyristor snubber PDF

    Contextual Info: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000


    Original
    16h300016h25001768/138atg/170/05+1jul-10 PDF

    abb cs 400

    Abstract: THYRISTOR 1200 5SGS08D2500
    Contextual Info: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500


    Original
    08d300008d25001768/138atg/161/05+4jul-10abb cs 400thyristor 12005sgs08d2500 PDF

    Contextual Info: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original
    06d300406d25041768/138adm/267/08+1jul-10 PDF

    5SGS 16H2500

    Contextual Info: 5SGS 16H2500  5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760


    Original
    16h25001768/138atg/170/05asep-11+15sgs 16h2500 PDF

    5SGS 08D2500

    Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
    Contextual Info: 5SGS 08D2500  5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395


    Original
    08d25001768/138atg/161/05asep-11+65sgs 08d25005sgs08d2500abb cs 400igcmabb 8005sgs PDF

    Contextual Info: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630


    Original
    12f25001768/138atg/164/05asep-11 PDF