10H4502 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

COSMIC

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 920 IFRMS = 1440 IFSM = 25 VF0 = 1.6 rF = 1.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115- 01 July 98 Features • Patented free-floating silicon technology

snubber IGCT

Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 950 1500 24 1.94 0.86 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 • • • • • Patented free-floating technology Industry standard housing

snubber IGCT

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology

5.5 kw abb

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 810 24x103 2.42 1.1 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.