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    30J250 Search Results

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    NIC Components Corp NMC-H0603NPO330J250TRPF

    - Tape and Reel (Alt: NMC-H0603NPO330J250TRPF)
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    Avnet Americas NMC-H0603NPO330J250TRPF Tape & Reel 24 Weeks 4,000
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    Avnet Abacus NMC-H0603NPO330J250TRPF Tape & Reel 18 Weeks 4,000
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    Walsin Technology Corporation 0402N330J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 33pF +-5% 25V
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    Mouser Electronics 0402N330J250CT 187,802
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    TME 0402N330J250CT 10,000
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    Walsin Technology Corporation 0805N330J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 33pF +-5% 25V
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    Mouser Electronics 0805N330J250CT 14,160
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    Walsin Technology Corporation 0201N130J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 13pF 5% 25V
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    Mouser Electronics 0201N130J250CT 2,250
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    TME 0201N130J250CT 15,000
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    Walsin Technology Corporation 0201N330J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 33pF +-5% 25V
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    Mouser Electronics 0201N330J250CT 1,114
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    TME 0201N330J250CT 15,000
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    30J250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5SGA30J2501

    Contextual Info: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 30 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V mΩ V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Feb.97 Features • Patented free-floating technology • Low on-state and switching losses • Annular gate electrode


    Original
    30j25010e-030e-020e-01+2ch-56005sga30j2501 PDF

    abb 2040

    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original
    30j25015sya1213-02ch-5600abb 2040 PDF

    30J250

    Abstract: 5SGA30J2501 THYRISTOR GTO
    Contextual Info: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 3000 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 April 98 Features • Patented free-floating technology • Low on-state and switching losses


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    30j2501ch-560030j2505sga30j2501+1thyristor gto PDF

    ABB thyristor 5

    Abstract: cosmic GTO thyristor ABB 30J250
    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original
    30j2501ch-5600abb thyristor 5cosmic+2gto thyristor abb30j250 PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


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    01r250105d250115f250220h2501+925h250130j250120h450211f250103d45015sdf01r25015sga5sga30j2501rtk 031 PDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


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    15f250205d250101r250120h2501+1211f250125h2501abb 5sga2sh25gto abbgto gate drive unit2sh2501tjm 105sga 20h2501abb gtor25015sga 15f2502 PDF