AMPLIFIER MMIC 576 Search Results

SNA-576

Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
Contextual Info: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

UPC1677C

Abstract: UPC1677B
Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm

Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

S1243

Contextual Info: PRELIMINARY DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description x IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

SKY65137

Abstract: S1770 s414 transistor S1383 S413 S414 s2063
Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

transistor kp 303

Abstract: VP15-00-3 transistor 14026
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super

circuits metal detector

Abstract: SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414
Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

60Ghz

Abstract: FMM5715X 544 mmic 60GHz transistor 7400 chip 112 amp 827 578 ED-4701 power amplifier mmic fmm5715
Contextual Info: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

Contextual Info: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications

H580

Abstract: HMC580ST89E HMC580ST89
Contextual Info: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G

Marking M2

Contextual Info: GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V

Marking M2

Abstract: marking M2 SOT23 INFINEON TD-9012 jrf SOT-23
Contextual Info: Infineon I êchncÈogiei GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V

SNA-576

Contextual Info: Stanford Microdevices Product Description SNA-576 Stanford Microdevices' SNA-576 is a GaAs monolithic broadband amplifier housed in a tow-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V, DC-3 GHz, Cascadable

Contextual Info: i Stanford Microdevices Product Description SNA-576 Stanford M icrodevices’ SNA-576 is a GaAs m onolithic broadband am plifier housed in a low-cost stripline ceram ic package. This am plifier provides 19dB of gain when biased at 70m A and 5.0V. DC-3 GHz, Cascadable

AN-S003

Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
Contextual Info: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the

Contextual Info: ell Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

heds 5310 encoder

Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
Contextual Info: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

dlva

Abstract: MIL-I-46058C Flip Chip on flex BGA PROFILING diplexers detector video compression amplifier
Contextual Info: RF/Microwave and Optoelectronics Over 45 Years of Proven Performance in Microelectronics Packaging Over 45 Years of Proven Performance Teledyne Microelectronic Technologies provides multichip modules and microelectronics for today’s most demanding applications. Designing, fabricating and testing high