AMD AM29F016 Search Results
AMD AM29F016 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPS536C5RSLR | Texas Instruments | 12-phase digital step-down multiphase controller with SVI3 and PMBus for AMD platform 48-VQFN -40 to 105 |
|
||
| TPS53685RSBR | Texas Instruments | Eight-phase digital step-down multiphase controller with SVI3 and PMBus for AMD platform 40-WQFN -40 to 105 |
|
AMD AM29F016 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DB25-Connector
Abstract: I28F008 29lv004b 29LV008B AMD29LV400B i28F016 AM29LV400BW I28F200 amd 29F010 flash memory 29F800T jtag
|
Original |
lansc400d-79200jtag386intel386tm+10 | |
AM29 FLASH
Abstract: M29F040B AM29 amd nor flash am29f400 Device M29F010B Lot code M29F010B 004B M29W160EB equivalent 040B
|
Original |
an1185am29 flashm29f040bam29+7 | |
AM26LS31SC
Abstract: AM27C512-150DC AM26LS33PC AM27C010-120DC AM26LS30PC AM29F400BT am29f040b AM27C512-90DC X9312WP AM27C64-120DC
|
Original |
am29f010am29f010-45jcam29f010-45ecx9312wp+15 | |
fujitsu 29LV160B
Abstract: 29F800B 29LV160B 29F160B m29f800bb
|
Original |
lansc520d-79200d-79206fujitsu 29lv160b+4 | |
|
Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U16SJ08-XX 16MB FLASH SIMM, based on AMD Am29F016D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U16SJ08-XX is a 5.0V flash memory SIMM, composed of eight CMOS |
Original |
avef29f016u16sj08-xxam29f016d16mbit80-pin+1 | |
AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
|
Original |
am29f040b date code marking informationam29f040b part markingmarking code sa2marking am29f040b+6 | |
|
Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U08SJ08-XX 8MB FLASH SIMM, based on AMD Am29F016B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U08SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 16Mbit |
Original |
avef29f016u08sj08-xxam29f016b16mbit80-pin+1 | |
20.000H
Abstract: 00000H AM29F010
|
Original |
20.000h00000ham29f010 | |
|
Contextual Info: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation |
OCR Scan |
am29f017bam29f016c20-year48-pin | |
|
Contextual Info: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ Minimum 1,000,000 program/erase cycles per sector guaranteed — Backwards-compatible with the Am29F016C |
OCR Scan |
am29f017bam29f016c | |
AM29F016
Abstract: EDI7F332MC
|
Original |
edi7f332mc2mx32am29f0162x2mx32+4 | |
AM29F016B-SContextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology |
OCR Scan |
am29f016bam29f016icc41am29f016b-s | |
29F016Contextual Info: AMENDMENT AMD£I Am29F016 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am 29F016 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacem ent pages for the Am 29F016 data sheet, |
OCR Scan |
am29f01629f01611796d18805c+2 | |
|
Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C |
OCR Scan |
am29f016b20-year29f01644-pin | |
|
|
|||
100Nm
Abstract: AMD 21551
|
OCR Scan |
am29f016b100nmamd 21551 | |
|
Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C |
OCR Scan |
am29f016b20-year29f01648-pin+2 | |
|
Contextual Info: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed |
OCR Scan |
am29f016b | |
AM29 FLASH
Abstract: "NOR Flash" intel retention amd nor flash LOT code stmicroelectronics AM29 AMD part numbering Lot code M29F010B M29F010B Lot code M29F040 M29F040B
|
Original |
an1185am29 flashnor flash" intel retentionamd nor flash+7 | |
AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
|
Original |
am29f016dam29f016d-120am29f016d-150am29f016d-70+5 | |
e4c diode
Abstract: 29f400 AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
|
Original |
am29f016de4c diode29f400am29f016d-120+7 | |
|
Contextual Info: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and |
Original |
am29f016d | |
M25P08
Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
|
Original |
sst39sf512sst29ee512am28f512m29f512+16 | |
29F080
Abstract: 28F008S3 28F008S5 29786 Am29LV/F080
|
Original |
intel-374ap-62716-mbit29f080+4 | |
AM29F032B 04h
Abstract: 19945 AM29F010
|
OCR Scan |
am29fxxxam29f010aam29f100am29f032b 04h+2 | |