004B Search Results

MRB11040W

Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Contextual Info: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an

Contextual Info: bOE 1 • S23SbQS 004b51b 734 » S I E G SIEMENS LD 261 ARRAYS LD 262—269/260 SINGLE DIODE SIEMENS AKTIENGESELLSCHAF INFRARED EMITTER DIODES Package Dimensions in Inches mm 106 (2 7) 098 (2 5 ) 1 * » 138(3 5 ) 118(3 0 ) _ L Maximum Ratings

3067

Abstract: BD677A BD679A BD675A BD676A BD678A BD680A
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification Silicon Darlington power transistors PHILIPS INTERNATIONAL D ESCRIPTION 711002b 004BT7S bBl WÊ PHIN r -3 3 -z * f Q U IC K R E F E R E N C E DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a

PTS06A-10-6S

Abstract: BENDIX ptih-10-6p 010b Pressure Transmitter application engine engine Pressure Transmitter MICRO USA Pressure Sensor engine oil pressure sensor 8 pin transmitter end male connector B243 automotive oil pressure electronic sensor
Contextual Info: DIFFUSED SEMICONDUCTOR PRESSURE TRANSMITTER PXM6000 Series 4-20 mA Output 0-1 to 0-25 bar PXM6000 $ 550 PXM6000MC6-004BARAI Shown Smaller Than Actual Size All Ranges MADE IN USA NIST OMEGADYNE ߜ High Reliability ߜ Long Term Stability ߜ All Stainless Steel Case

CA3260T

Abstract: CA3260 CA3260E CA3260AT ca3260e harris CA3260AE
Contextual Info: SEMICOND S E CT OR b lE D 4 3 G2 2 7 1 • 004b35b 130 *H A S CA3260 iü HARRIS SEMICONDUCTOR BiMOS Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides - Vary High Z, - 1-5TO 1.5 x 1012il Typ.

Contextual Info: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q

Contextual Info: 7 ^2 *1 2 37 ¿57 004b274 434 • S G T H _ SGS-THOMSON H ¥^ ô «S STP5N60 STP5N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N60 STP5N60FI ■ . ■ ■ ■ V dss RDS(on) Id 600 V 600 V < 1.6 Í Í < 1.6 Si 5.6 A

AT84AS004CTP

Abstract: diode t25 4 d9 AT84AS004VTP diode t25 4 B9 DIODE A7N a6n 100 E20 L27 b7n diode transformer e19 transistor a7n
Contextual Info: Replacing AT84AS003/004 ADC with AT84AS003/004B ADC 1. Introduction This application note aims at providing you with a comparison and recommendations to migrate from the existing AT84AS003/004 to the AT84AS003/004B. It first compares the two versions including:

Contextual Info: bOE D • ô23SbDS 004b57fl 7 1 e! « S I E G SIEMENS 7 - 4 1- 0 $ SFH 483501 40-STRIPE ARRAY SIEMENS AKT IENGESELLSCHAF Package Dimensions in mm 6.7 6.3 2.4 _ 2.0 1. 2. 3. 4. N.C. NTC Thermistor NTC Thermistor Laser Cathode 5. Laser Anode 6. Monitor Diode Anode

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M 29W 004T M 29W 004B w , SCS-THOMSON k7 # . 4 Mb x8, Block Erase LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS - FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10^is typical - PROGRAM/ERASE CONTROLLER (P/E.C.)

SST49LF004B334CWHE

Abstract: 49lf002b SST49LF003B-33-4C-NH
Contextual Info: 2 Mbit / 3 Mbit / 4 Mbit LPC Firmware Flash SST49LF002B / SST49LF003B / 004B SST49LF002B / 003B / 004B2Mb / 3Mb / 4Mb LPC Firmware memory Data Sheet FEATURES: • 2 Mbit, 3 Mbit, or 4 Mbit SuperFlash memory array for code/data storage – SST49LF002B: 256K x8 2 Mbit

intel pa28f400

Abstract: intel 28F400 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569
Contextual Info: M f ä ilL D G M Ä Ö S Y in le l 4-MBIT (256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 004BV-T/B, 28F400CE-T/B, 28F 004B E -T /B Intel Sm artVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read Operation

SK 863

Abstract: ff-009-p4x8b
Contextual Info: FIGURE 1 .34 8.6 REF. "B” PANEL -* THICKNESS ». H A REF. FF-001B .79 (20) RM S-76 FF-004B .71 (18) FF-003-P3x5.5B RM S-42 .53 (13.5) FF-005-P4x5B FF-005-P4x6B .79 FF-005-P4x7B (20) FF-005-P4x8B FF-006-P4x6B FF-006-P4x7B .55 FF-006-P4x8B (14) FF-006-P5x6.5B

LP1217

Abstract: dr605 006-BM 027b
Contextual Info: Multilayered Filters SMD MDR series (Multilayered Dielectric Type) Type M DR605C M DR 017B M DR617E M DR 018B M D R 620B M DR 026B M DR 027B M D R 028B M DR 029B M DR601C M DR 001B2 M DR 004B M DR 008B M D R602C M DR 002B M DR 006B M DR 606E M DR 603C M DR 003B

TRANSISTOR K 314

Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Contextual Info: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

lte4002s

Abstract: 005129 industrial linear ic
Contextual Info: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R

RX3034B70W

Abstract: mtt 95 a 12 n 0/Siemens MTT 95 A 12 N
Contextual Info: I — 3 3 '~ l£ 3 DEVELOPMENT DATA RX3034B70W This d a ta s h e et c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are s u b je c t t o ch an g e w ith o u t n o tic e . PHILIPS international ^ 5bE T> 7110fl2b 004bS3b b2b IPHIN PULSED MICROWAVE POWER TRANSISTORS

28F004B5

Abstract: 28F200B5 28F400B5 28F800B5 intel DOC 128KBYTE
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: January 1998 Order Number: 297862-003 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

WPSM

Abstract: WPSML
Contextual Info: Multilayer Miniature Ceramic Balun WLAN IEEE 802.11a/UNII 5GHz WPSMLBLN004/5B Explanation of Part Number WPSMLBLN (1) XXXX (2) X B (3) (4) (1) (2) Product Series WPSMLBLN Product Type 004B: 50Ω Balanced impedance 005B: 100Ω Balanced impedance (3) Packaging Code

intel topside mark

Abstract: flash device MARKing intel intel topside marking on flash memory 28F400B5 28F800B5 28F004B5 28F200B5 intel DOC intel flash marking intel topside marking
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: September 1998 Order Number: 297862-005 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

transistor ha17431p

Abstract: "Hitachi Kodaira Semiconductor" IC pt 2395 CIRCUIT DIAGRAM HA17431P hitachi selection guide upak Hitachi DSA0076 HA17385 HA17431PA HA17431FPAJ
Contextual Info: HA17431 Series Shunt Regulators Application Note ADE-504-004B Z Rev.3 6/5/01 Hitachi Company or Division Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this

Contextual Info: HARRIS SEHICOND SECTOR blE D »< HARRIS W • 4305271 004b733 Sb7 ■ H A S SEMICONDUCTOR H A -5177 B I * M M Ultra-Low O ffset Voltage Operational Amplifier March1893 Features Description • Low Offset Voltage. . . . . • Low Offset Voltage D rift

2515-5

Abstract: HA2515 HA2-2515-5 hp5082-2810 HA2510
Contextual Info: HARRIS S E m C O N D SECTOR blE T> m M3D2E71 004b4bS 0E4 H H A S ¡3 H a r ris HA-2510, HA-2512 March 1993 High Slew Rate Operational Amplifiers U U 5 SEMICONDUCTOR Features Description • High Raté

Power DIODE A30

Abstract: a30 DIODE DIODE A30
Contextual Info: bOE D • S235bOS 004b5bb TT7 H S I E 6 SIEMENS SFH 4448 TRANSCEIVER OPTICAL MODULE SIEMENS AKTIEN6ESELLSCHAF Package Dimensions in mm Emitter @1 HI Detector a FEATURES Maximum Ratings • Bidirectional Module with Integrated Beam Splitter Output power ratings refer to the SM fiber output. The operating