ICC41 Search Results

Contextual Info: REV ECN. NO. A EDIQÄO INICIAL B NOVO CÓDIGO •Pick and place area 93.50 .15,8.5. APP DATE 13.45 Unit: mm Tolerances: ±0.05 mm Reference dimension for PCB Layout HOW TO ORDER: ICC4136CDR T E C H N IC A L C H A R A C T E R IS T IC S 1. General Characteristics

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P3323ATE-C75/H 32M X 64 SDRAM DIMM, Unbuffered, based on 16M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P3323ATE-C75/H is a 32M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BTE-C75/S 16M X 64 SDRAM DIMM, Unbuffered, based on 16M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BTE-C75/S is a 16M bit X 64 Synchronous Dynamic RAM high density memory

UT8QNF8M8

Abstract: UT8QNF8M thermal specifications UT699
Contextual Info: Standard Products UT8QNF8M8 64Mbit NOR Flash Memory Datasheet April 19, 2013 www.aeroflex.com/Norflash FEATURES  64Mbits organized as either 8M x 8-bits or 4M x16-bits  Fast 60ns read/write access time  Functionally compatible with traditional single power

UT8QNF8M8

Contextual Info: Standard Products UT8QNF8M8 64Mbit NOR Flash Memory Datasheet September 9, 2013 www.aeroflex.com/Norflash FEATURES  64Mbits organized as either 8M x 8-bits or 4M x16-bits  Fast 60ns read/write access time  Functionally compatible with traditional single power

AM29F016B-S

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology

mitsubishi fx

Abstract: L-12 M5M44256AJ-12 MSM44256
Contextual Info: 3 2 4 = 1 5 2 5 0015544 7 • M IT S U B IS H I LSIs M 5 M 4 4 2 5 6 A P , J, L -8 , -1 0 , -1 2 T—45—23—17 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT (2 6 2 1 4 4 -W O R D BY 4 - b i rjDYNAMIC RAM MITSUBISHI D ESCRIPTIO N This is a family of 262144-word by 4-bit dynamic RAMs,

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P0823BTE-C75/H 8M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P0823BTE-C75/H is a 8M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P0823BTE-C75/H consists of eight CMOS 8M X 8 bit with 4 banks Synchronous

Contextual Info: bPM^ö 25 OOISTMS & • 3 e! E D MITSUBISHI LSIs MH1M08A0J-8, -10, •12/ MH1M08AOJA-8, -10,-12 PAST PAGE MODE 1 0 4 8 5 7 6 -W 0 R D BY 8-BIT DYNAMIC RAM MITSUBISHI DESCRIPTION The MH1M08A0J, J A is 1048576 word x 8 bit dynamic RAM and consists of eight industry standard 1M x 1 dy­

M28F256A

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723ATE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 16M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723ATE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ Minimum 1,000,000 program/erase cycles per sector guaranteed — Backwards-compatible with the Am29F016C

Contextual Info: Standard Products UT8QNF8M8 64Mbit NOR Flash Memory Datasheet August 15, 2012 www.aeroflex.com/Norflash FEATURES  64Mbits organized as either 8M x 8-bits or 4M x16-bits  Fast 60ns read/write access time  Functionally compatible with traditional single power

Contextual Info: 15.7D TECHNICAL C H AR AC T ERISTIC S 1. G eneral C h a ra cte ristics Dimension: 15.70L x 16.40W x 2.60H mm Weight: Approx. 0.50 g Contact erne pie: Friction technology 10.09C R EF. 3. E le ctrical C h ara cte ristics Number of contacts: 6; 8 pins optional)

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P6453BT1-C75/S 64M X 64 SDRAM DIMM, Unbuffered, based on 32M X 8, 4 Banks, 8K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P6453BT1-C75/S is a 64M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P3323BTE-C75/S 32M X 64 SDRAM DIMM, Unbuffered, based on 16M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P3323BTE-C75/S is a 32M bit X 64 Synchronous Dynamic RAM high density memory

29F0400

Abstract: UT8QNF8M8 ut8qnf sa81 smd UT8QNF8M
Contextual Info: Standard Products UT8QNF8M8 64Mbit NOR Flash Memory Datasheet August 15, 2012 www.aeroflex.com/Norflash FEATURES  64Mbits organized as either 8M x 8-bits or 4M x16-bits  Fast 60ns read/write access time  Functionally compatible with traditional single power

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P0823BT2-C75/H 8M X 72 SDRAM DIMM with PLL and Register, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P0823BT2-C75/H is a 8M bit X 72 Synchronous Dynamic RAM high density memory

FAA 15

Contextual Info: MITSUBISHI LSIs M 5 M 4 4 4 0 0 A W J , J, L ,T P , R T -6 , -7 ,- 8 , - 1 0 FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 4-B IT D Y N A M IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 1048576-word by 4 -b it dynamic RAMS,

M5M44100

Abstract: M5M44100J
Contextual Info: b S t4Tñ2S Ü G 1 S 7 7 1 MITSUBISHI LSls 7 M5M44100J, L-8, -10 1-46-23-15 FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -WORD B Y 1-BITjl DYNAMIC RAM MITSUBISHI DESCRIPTION This is a family of 4194304-word by 1-bit dynamic RAMs, fabricated with the high performance CMOS process, and