AM281 Search Results

Contextual Info: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches

Contextual Info: Am2814/3114 Dual 128-Bit Static Shift Register D istinctive Characteristics • • 2nd Source to Texas Instrum ents 3 1 1 4 • O peration guaranteed from DC to 2 .5 M H z . 100% reliab ility assurance testing in com pliance w ith M IL - S T D -8 8 3 •

Contextual Info: Am3114/Am2814 Dual 128-Bit Static Shift Register tive Characteristics Source to Texas Instruments 3114 ation guaranteed from DC to 2MHz • 100% reliability assurance testing in compliance with M IL-STD-883 • Full military grade devices available JC T IO N A L D ESCRIPTIO N

2817a

Abstract: MIL-STD-663
Contextual Info: Am2817 A 2048 x 8-B it E lectrically Erasable PROM • • 5-Volt-only operation Write-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication Self-timed write cycle with on-chip latches Minimum endurance of 10,000 write cycles per byte with

2813D

Abstract: AM28128
Contextual Info: Am2812 / Am2812A • Am2813/Am2813A 32x8 and 32x9 First-In First-Out Memories Distinctive Characteristics • Am2812 ha* serialM parallel input and output • Data rates uplcT l MHz • Completely independent read and write operations • "H alf-full" flag

128-BITSHIFT

Abstract: Am931 Am3114 AM2814DC AM2814DM AM2814PC TMS3114JC TMS3114NC
Contextual Info: Am2814/3114 Dual 128-Bit Static Shift Register D is tin c tiv e C h a ra cte ristics • • • 100% r e lia b ility assurance te stin g in c o m p lia n c e w ith M l L -S T D -8 8 3 • F u ll m ilita r y grade devices available 2 n d Source t o Texas In s tru m e n ts 3 1 1 4

Contextual Info: Am2810 Dual 128-Bit Static Shift Register Distinctive Characteristics • 2nd Source to Mostek 1002P • Built-in pull-up resistors • 100% reliability assurance testing in compliance with M IL-S TD -883 • Operation guaranteed from DC to 2 MHz LO G IC S YM BO L

Am3114

Abstract: AM311D Am9312 AM2814DC AM2814DM AM2814PC TMS3114JC TMS3114NC AM93L
Contextual Info: Am2814/3114 Dual 128-Bit Static Shift Register D istin c tiv e C ha ra cteristics • • 2nd Source to Texas Instrum ents 3 1 1 4 O peration guaranteed from DC to 2 .5 M H z . • 100% reliab ility assurance testing in com pliance w ith M IL - S T D -8 8 3

pull-up resistor shift register

Abstract: AM2810D AM2810DC AM2810PC AM1002
Contextual Info: Am2810 Dual 128-Bit S ta tic Shift R egister • 100% reliability assurance testing in compliance with Ml L-STD-883 • Operation guaranteed from DC to 2MHz Distinctive Characteristics • 2nd Source to Mostek 1002P Built-in pull-up resistors L O G IC S Y M B O L

Contextual Info: Am2814/3114 Dual 128-Bit Static Shift Register D istinctive Characteristics • • 2nd Source to Texas Instrum ents 3114 100% re lia b ility assurance testing in com pliance w ith Ml L -S T D -8 8 3 • O peration guaranteed from DC to 2 .5M Hz. • Full m ilita ry grade devices available

AM2812ADC

Abstract: AM2813ADC AM2813DC AM2812DC AM2812ADL 500KHZ AM2812DL AM2813DL 32-FIFO AM2812
Contextual Info: Am2812 / Am2812A • Am2813/Am2813A 32x8 and 32x9 First-In First—Out Memories Distinctive Characteristics • C om pletely independent read and w rite operations • " H a lf- fu ll” flag • A m 28 12 ha^seriahor parallel in p u t and o u tp u t • Data rates u p ïc T ï MHz

Am3114

Abstract: AM2814DC AM2814DM AM2814PC TMS3114JC TMS3114NC
Contextual Info: Am3114/Am2814 Dual 128-Bit Static Shift Register tive Characteristics So urce t o T e xas Instrum ents 3 1 1 4 a tio n guaranteed fro m D C t o 2 M H z • 100% r e lia b ilit y a s s u ra n c e te s tin g in c o m p lia n c e w it h M IL -S T D -8 8 3 •

M9312

Abstract: MK1002P AM1002 MK1002L Am2810-Am1002P-Am1002
Contextual Info: ! Am2810 •Am1002P*Am1002k_ Dual 128-Bit Static Shift Register Distinctive Characteristics • 2nd Source to Mostek 1002Pand 1002L. • 1 0 0 % r e lia b ilit y a ssuran ce te s tin g in c o m p lia n c e w it h M IL STD-883. • B uilt-in pull-up resistors.

Contextual Info: Am2814/3114 Dual 128-Bit Static Shift Register Distinctive Characteristics • 2nd Source to Texas Instruments 3114 • Operation guaranteed from DC to 2 .5M Hz. • 100% reliability assurance testing in compliance with • M IL -S T D -8 8 3 Full military grade devices available

406DJ

Contextual Info: Am2812 / Am2812A *Am2813 / Am2813A 32x8 and 32x9 First-In First-Out Memories Distinctive Characteristics • Completely independent read and w rite operations • "H a lf-fu ll" flag • • Am 2812 has serial or parallelinput and output Data rates up to 1 MHz

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

C8117

Abstract: sf 123 c am AMS-117 am103 AMG-134 AM148
Contextual Info: AMPLIFIER SELECTION GUIDE MODEL NO. FREQUENCY RANGE MHz GAIN (dB) TYP NOISE FIGURE (dB) TYP AM<S09 AM>)894 tO ÁWM07 0-5^0 0 5-100 0& 100 1-100 10 16 30 10 4.6 3.8 4,5 1.4 AM-162 AMC-162 10-100 10-100 12.5 12.5 1.3 1.3 3RD ORDER INTERCEPT (dBm) TYP . •

TE 1517

Abstract: ic 1117 c 1117 amplifier 1 2 ghz
Contextual Info: •1 GaAs LOW NOISE AMPLIFIER MODELS AM-281 /282 1.1-1.7 GHz GAIN: 16 dB Low Noise Amplifier, 1.5 dB Typical Monolithic Amplifier Chip In Miniature Ceram ic Package Guaranteed Specifications* From - 55°C to +85°C Frequency Range Minimum Gain (@ 25°C )

Adams-Russell

Abstract: 1117G anzac am-110 anzac am anzac AM-281 AM-282 SW-228
Contextual Info: M/A-COM 5b42177 14E D INC/ AN ZA C »IV 0003117 3 T - m - ß Low Noise Amplifier, 1.5 dB Typical Monolithic Amplifier Chip In Miniature Ceramic Package Guaranteed Specifications* F ro m -5 5°C to + 8 5 °C Frequency Range_ 1.1 -1.7 GHz

Am29130 16 to 30 Bit Shift Register

Abstract: Fuse-Programmable PROM tc004050 am29516 Am28130 Fuse-Programmable controller LHD-14 Am29130 ZD15L
Contextual Info: // Am 2 9 1 3 0 16-Bit Barrel Shifter PR ELIM IN A R Y ' £ '& l / ‘ > i DISTINCTIVE CHARACTERISTICS • • Powerful Shifter - Shifts or rotates left/right with a two's-complement or a sign-magnitude shift count. Bit Insertion - Inserts a fill bit depending on the position from the

Contextual Info: A m 2812 / A m 2812A •A m 2813/A m 2813A 32x8 and 32x9 First-In First-Out Memories Distinctive Characteristics • Complately independent read and write operations • • "Half-full" flag • Data rates up to 1 MHz A m 2 8 1 2 serial or parallelinput and output

af201

Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211
Contextual Info: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed

am 332

Abstract: AM2001 Ax292
Contextual Info: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology