AM158 Search Results

Contextual Info: Analog Power AM1580CE N & P-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 740 @ VGS = 10V 80 810 @ VGS = 4.5V 3300 @ VGS = -10V -80 3400 @ VGS = -4.5V

Contextual Info: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max STL9N60M2 ID 0.86 Ω 650 V 4.8 A • Extremely low gate charge 1

10N60M2

Contextual Info: STF10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF10N60M2 650 V 0.6 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

Contextual Info: STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability

STD10N60M2

Abstract: STP10N60
Contextual Info: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2

Contextual Info: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2.9 W • RDS(on) * Qg industry benchmark

stp7n60

Contextual Info: STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 1 Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.95 Ω 5A STD7N60M2 DPAK STP7N60M2

C8117

Abstract: sf 123 c am AMS-117 am103 AMG-134 AM148
Contextual Info: AMPLIFIER SELECTION GUIDE MODEL NO. FREQUENCY RANGE MHz GAIN (dB) TYP NOISE FIGURE (dB) TYP AM<S09 AM>)894 tO ÁWM07 0-5^0 0 5-100 0& 100 1-100 10 16 30 10 4.6 3.8 4,5 1.4 AM-162 AMC-162 10-100 10-100 12.5 12.5 1.3 1.3 3RD ORDER INTERCEPT (dBm) TYP . •

Contextual Info: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max STF18N60M2 650 V 0.28 Ω ID 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

E111753

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board

STP18N60M2

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: STF9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features 1 2 Order code VDS @ TJmax RDS on max ID STF9N60M2 650 V 0.78 Ω 5.5 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation

Contextual Info: STL17N3LLH6 N-channel 30 V, 0.0038 Ω typ., 17 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS on max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb.

18N60M2

Contextual Info: STF18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID STF18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge

AL1510

Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Contextual Info: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006

AM152

Abstract: AM106 AM100 AM101 AM1010 AM102 AM104 AM108 AM150
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board l Reliable construction utilizing molded plastic

E111753

Abstract: AM150 AM151 AM1510 AM152 AM154 AM156 AM158
Contextual Info: 3.DATASHEET AM150~AM1510 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes Unit: inch mm AM .370(9.4) .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES • Ratings to 1000V PRV • Surge overload rating: 50 Amperes peak

Contextual Info: STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes STF9N60M2 STFI9N60M2 1 2 RDS on max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge

AM1510

Abstract: AM152 AM154 AM156 AM158 E111753 AM150 AM151
Contextual Info: DATA SHEET AM150~AM1510 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 600 Volts CURRENT 1.5 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 50 Amperes peak

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

AM100

Abstract: AM101 AM102 AM104 AM106 AM150 AM151 AM152 AM154
Contextual Info: Silicon Miniature Single-Phase Bridge COMCHIP www.comchiptech.com AM 100/150 Thru AM1010/1510 Voltage: 50 - 1000 Volts Current: 1.0 - 1.5 Amp AM Features Ratings to 1000V PRV Surge overloadrating - 30/50 amperes peak Ideal for printed circuit board Reliable construction utilizing molded plastic

Contextual Info: Bridge Rectifiers 1.5 A Single Phase Features : • • • • • Ratings to 1,000 V PRV Surge overload rating - 30 / 50 amperes peak Ideal for printed circuit board Reliable construction utilizing moulded plastic Mounting position : Any Mechanical Data:

Contextual Info: STL18N3LLH7 N-channel 30 V, 0.0034 Ω typ., 18 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - target specification Features Order code VDS RDS on max ID STL18N3LLH7 30 V 0.0045 Ω 18 A • Very low on-resistance