AM151 Search Results

SO42

Abstract: AM1517-025 1517-25
Contextual Info: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS • REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED • ∞:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METALLIC/CERAMIC HERMETIC PACKAGE

AM1517-025M

Contextual Info: AM1517-025M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI 1517-025M is Designed for Satellite communications applications in the 1620 to 1660 MHz range. A .025 x 45° 4x .062 x 45° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks

E111753

Abstract: AM150 AM151 AM1510 AM152 AM154 AM156 AM158
Contextual Info: 3.DATASHEET AM150~AM1510 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes Unit: inch mm AM .370(9.4) .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES • Ratings to 1000V PRV • Surge overload rating: 50 Amperes peak

SO42

Abstract: AM1517-025
Contextual Info: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS • REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED • ∞:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METALLIC/CERAMIC HERMETIC PACKAGE

AM1510

Abstract: AM152 AM154 AM156 AM158 E111753 AM150 AM151
Contextual Info: DATA SHEET AM150~AM1510 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 600 Volts CURRENT 1.5 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 50 Amperes peak

AM1517-025

Abstract: S042
Contextual Info: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM1517-012

Abstract: S042
Contextual Info: AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN

mismatch load

Abstract: AM1517-012 S042 1517-12
Contextual Info: AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN

Contextual Info: AMPLIFIERS BY FREQUENCY COIUT u'SVJR IMPED IN ’O U l !M * 1 51 1.8:1 15 1 151 1 5.1 NOISE FIG U RE MB M ;n 1 P I dE u iB m r •. !• : vUli* LG, rs MOM DC POW ER O U TLIN E sm A; NC Y sr ” r *0 15 to 15 85 40 16 195 15 7 5 *0 /5 7 b 50/60 50*0 n s r

TO-220 morocco st 0148

Contextual Info: STB31N65M5, STF31N65M5 STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 Ω typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet − production data Features Order codes TAB VDSS @ TJmax RDS on max

Contextual Info: L6480 Fully integrated microstepping motor driver with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function

AM130-3

Abstract: 30-204 am1306kf
Contextual Info: AM1 17.5 49.2 24.1 HIGH CONTACT CAPACITY, PRECISE OPERATION AM1 NZ BASIC SWITCHES FEATURES TYPICAL APPLICATION • 10 A High current switching capacity and high precision • Wide allowance of operating speed • Versatile variety of actuators • UL/C-UL approved

C8117

Abstract: sf 123 c am AMS-117 am103 AMG-134 AM148
Contextual Info: AMPLIFIER SELECTION GUIDE MODEL NO. FREQUENCY RANGE MHz GAIN (dB) TYP NOISE FIGURE (dB) TYP AM<S09 AM>)894 tO ÁWM07 0-5^0 0 5-100 0& 100 1-100 10 16 30 10 4.6 3.8 4,5 1.4 AM-162 AMC-162 10-100 10-100 12.5 12.5 1.3 1.3 3RD ORDER INTERCEPT (dBm) TYP . •

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

2A1045

Abstract: AU-1433 miteq AM-3A-000110 AU-1547 AU155 AMP-1502 am-1523 miteq bipolar amplifiers D234B
Contextual Info: Back to Bipolar Amplifier Home Page BIPOLAR AMPLIFIERS Amplifiers By Frequency BIPOLAR AMPLIFIERS 10 kHz – 2 GHz UPDATE FALL 1999 Medium Power Amps. Special Application Amps. Amps. By Model Number Performance Curves Outline Drawings • • • • AU Series

3A102

Abstract: Frequency Triplers AU-1433 diodes catalog au-1180 au 1350 AM-3A-000110 microwave product catalog AU-4A-0110 AU155
Contextual Info: AMPLIFIERS TO 2 GHz • AU SERIES • AM SERIES • AUP SERIES • AMP SERIES • • • • • • LOW NOISE MEDIUM POWER WIDE BAND MRI BANDS CELLULAR/PCN BANDS INMARSAT BANDS TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION 2 GENERAL SPECIFICATIONS 2 OPTIONS

Contextual Info: L6480 cSPIN : microstepping motor controller with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full-bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function

AM1100K

Abstract: AM1300K AM1100 AM110811K AM1307K AM1107K AM1503K AM130811K AM1731K AM-1513
Contextual Info: HIGH CONTACT CAPACITY, PRECISE OPERATION 49.2 17.5 24.1 AM1 NZ BASIC SWITCHES FEATURES TYPICAL APPLICATION • 15 A High current switching capacity and high precision • Wide allowance of operating speed • Versatile variety of actuators • UL/CSA approved

DMD10

Abstract: DMD15 MB86604A MB86604L NEXUS CONNECTOR TP 120 mb86604 mb86601a mb86601 D9 DG 203781
Contextual Info: FUJITSU SEMICONDUCTOR ASSP MANUAL AM15-10410-1E SCSI-II PROTOCOL CONTROLLER MB86604A/MB86604L DESIGN MANUAL MB86604A/MB86604L SCSI-II PROTOCOL CONTROLLER DESIGN MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior

E111753

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board

Contextual Info: powerSTEP01 System-in-package integrating microstepping controller and 8 N-channel power MOSFETs Datasheet - preliminary data Description The powerSTEP01 is a a system-in-package integrating 8 N-channel 16 mΩ MOSFETs for stepper applications up to 85 V with a SPI

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MB88121B

Abstract: MB88121 mbc107 mbc107 transistor ND-19 SPP0110 032-G TIBC 0714H ccfl driver schematic fujitsu
Contextual Info: FUJITSU SEMICONDUCTOR ASSP MANUAL AM15-11201-1E FlexRay ASSP MB88121B User’s Manual FlexRay ASSP MB88121B User’s Manual FUJITSU LIMITED PREFACE • Purpose of this document Thank you for reading about this Fujitsu semiconductor device. The MB88121B is a controller that performs FlexRay communications in accordance with the FlexRay

SANYO Amorton

Abstract: 1.5V solar garden light solar cell Amorphous AM-5610 solar cells circuit diagram solar street light design AT7S64 solar traffic light design AM-1417 solar cell
Contextual Info: Amorphous Silicon Solar Cells / Amorphous Photosensors 2007-11 The Concept Behind Solar Cell Power Generation Electric current Light Transparent electrode + + + + + + + + + + + + + + i + +- + + + + - n - - - - - Metal - - - - - - Electron electrode + Positive hole