AM156 Search Results

Contextual Info: Analog Power AM1561CE N & P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 250 @ VGS = 10V 60 330 @ VGS = 4.5V 700 @ VGS = -10V -60 800 @ VGS = -4.5V

Contextual Info: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance

Contextual Info: STL8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: STL8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

4N80K5

Contextual Info: STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS on max ID PTOT 3 1 STD4N80K5

2A1045

Abstract: AU-1433 miteq AM-3A-000110 AU-1547 AU155 AMP-1502 am-1523 miteq bipolar amplifiers D234B
Contextual Info: Back to Bipolar Amplifier Home Page BIPOLAR AMPLIFIERS Amplifiers By Frequency BIPOLAR AMPLIFIERS 10 kHz – 2 GHz UPDATE FALL 1999 Medium Power Amps. Special Application Amps. Amps. By Model Number Performance Curves Outline Drawings • • • • AU Series

3A102

Abstract: Frequency Triplers AU-1433 diodes catalog au-1180 au 1350 AM-3A-000110 microwave product catalog AU-4A-0110 AU155
Contextual Info: AMPLIFIERS TO 2 GHz • AU SERIES • AM SERIES • AUP SERIES • AMP SERIES • • • • • • LOW NOISE MEDIUM POWER WIDE BAND MRI BANDS CELLULAR/PCN BANDS INMARSAT BANDS TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION 2 GENERAL SPECIFICATIONS 2 OPTIONS

E111753

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 3 4 • Ultra low on-resistance

Contextual Info: STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packages Datasheet − production data Features VDS RDS on max ID PTOT 600 V 8Ω 1.2 A 27 W Order codes STD1HN60K3 TAB TAB STU1HN60K3 3 3 1 2 • 100% avalanche tested

Contextual Info: STD8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max. ID PTOT STD8N80K5 800 V 0.95 Ω 6A 110 W • Worldwide best FOM (figure of merit)

AM152

Abstract: AM106 AM100 AM101 AM1010 AM102 AM104 AM108 AM150
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board l Reliable construction utilizing molded plastic

E111753

Abstract: AM150 AM151 AM1510 AM152 AM154 AM156 AM158
Contextual Info: 3.DATASHEET AM150~AM1510 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes Unit: inch mm AM .370(9.4) .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES • Ratings to 1000V PRV • Surge overload rating: 50 Amperes peak

320N4F6

Abstract: STH320N4F6-2
Contextual Info: STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET VI DeepGATE™ Power MOSFET Datasheet — production data Features Order codes STH320N4F6-2 STH320N4F6-6 VDS ID 1 RDS(on) max TAB 40 V 1.3 mΩ TAB 200 A 1. Current limited by package.

STD25NF20

Abstract: 25NF2
Contextual Info: STD25NF20 N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFETs in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Extremely low gate charge

24N60M2

Contextual Info: STL24N60M2 N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet − production data Features 6  6  6  %RWWRPĆYLHZ Order code VDS @ TJmax RDS on max ID STL24N60M2 650 V 0.21 Ω 18 A * 

Contextual Info: STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages Datasheet - production data Features Order codes 2 STI14NM50N TO-220FP TAB RDS on max ID 550 V 0.32 Ω 12 A STF14NM50N

AM1510

Abstract: AM152 AM154 AM156 AM158 E111753 AM150 AM151
Contextual Info: DATA SHEET AM150~AM1510 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 600 Volts CURRENT 1.5 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 50 Amperes peak

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

AM100

Abstract: AM101 AM102 AM104 AM106 AM150 AM151 AM152 AM154
Contextual Info: Silicon Miniature Single-Phase Bridge COMCHIP www.comchiptech.com AM 100/150 Thru AM1010/1510 Voltage: 50 - 1000 Volts Current: 1.0 - 1.5 Amp AM Features Ratings to 1000V PRV Surge overloadrating - 30/50 amperes peak Ideal for printed circuit board Reliable construction utilizing molded plastic

Anzac amc-156

Contextual Info: "1# #1 LOW NOISE ISOLATION AM PLIFIER 10-500 MHz GAIN: MODELS AM -/AM C-156 12. 5 dB 35 dB Typical Reverse Isolation 2 dB Typical Noise Figure 1.2:1 Typical VSW R Guaranteed Specifications* From - 5 5 ° C t o + 8 5 ° C Case Temp Frequency Range Gain ( + 25°C ) @ 50 MHz

Contextual Info: Bridge Rectifiers 1.5 A Single Phase Features : • • • • • Ratings to 1,000 V PRV Surge overload rating - 30 / 50 amperes peak Ideal for printed circuit board Reliable construction utilizing moulded plastic Mounting position : Any Mechanical Data:

7N80K5

Abstract: V/7N80K5
Contextual Info: STL7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)