AM101 Search Results

Contextual Info: DATA SHEET AM100~AM1010 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 30 Amperes peak

AM1011-500

Contextual Info: AM1011-500 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 X 600 2L FLG DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed LBand Radar Amplifier Applications. FEATURES INCLUDE: A B C D E F G H I J K L • Input/Output Matching • Gold Metallization

1030mhz

Abstract: AM1011-300 1030 PULSED 32uS MODE-S
Contextual Info: AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 7.7 dB GAIN

E111753

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board

Erie feedthrough

Abstract: erie capacitor Electrolytic Capacitor 50v ERIE ceramic capacitor AM1011-070 AM1011-70 S042 FEEDTHRU capacitor ceramic capacitor 4.7 mf 50v
Contextual Info: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN

Contextual Info: *Customer: SPECIFICATION ITEM MODEL Revision Date CHIP LED DEVICE SSC-AM101 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Characteristic diagram 5. Soldering profile 6. Outline dimension 7. Packing 8. Reel packing structure

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification SSC-AM101-H Rev 1.4, General SSC Drawn Approval Customer Approval Rev. 00 November 2007 www.ZLED.com Document No. : SSC-QP-7-07-24 (Rev.00) Z-Power LED X10490 Technical Data Sheet [ Contents ] 1. Features

AM101-DP1

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification AM101-DP CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev.01 December 2010 www.seoulsemicon.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet CONTENTS 1.

lta 301

Contextual Info: Am101/201/301 Operational Amplifiers Description: TheA m 101/201/301 m onolithic operational am plifiers are functionally, electrica lly and p in -fo r-p in equivalent to the National LM101, and LM201. They are available in the herm etic TO-99 metal can, dual-inline packages, and fla t packages.

AM152

Abstract: AM106 AM100 AM101 AM1010 AM102 AM104 AM108 AM150
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board l Reliable construction utilizing molded plastic

diode bridge 60 Ampere 1000V

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 E111753
Contextual Info: DATA SHEET AM100~AM1010 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes AM .370 9.4 .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES Unit: inch ( mm ) • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak

AM1011-400

Contextual Info: AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 400 W MIN. WITH 8.0 dB GAIN

AM101-73

Contextual Info: Preliminary DC/DC Converter AM101-73 Features SOT-6 • Converts a Positive Voltage Into a Negative Voltage 0.074 1.90 mm REF. 0.126 (3.20 mm) 0.087 (2.20 mm) PIN 6 ■ Ideal for Providing Gate Voltage Bias for GaAs Products ■ Ultra Small SOT-6 Package

Contextual Info: AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 7.7 dB GAIN

LM301H

Abstract: LM301 EQUIVALENT LM201 equivalent LM101D LM201H LD101 LD301 LM101 LM101H LM201
Contextual Info: Am101/201/301 Operational Amplifiers Description: The Am101/201/301 monolithic operational amplifiers are functionally, electrically and pin-for-pin equivalent to the National LM101, and LM201. They are available in the hermetic TO-99 metal can, dual-in­

AM1011-075

Contextual Info: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN

AM1011-075

Contextual Info: AM1011-075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. PACKAGE STYLE .400 2L FLG A 2xB I • Internal Input/Output Matching Networks

AM100

Abstract: AM101 AM102 AM104 AM106 AM150 AM151 AM152 AM154
Contextual Info: Silicon Miniature Single-Phase Bridge COMCHIP www.comchiptech.com AM 100/150 Thru AM1010/1510 Voltage: 50 - 1000 Volts Current: 1.0 - 1.5 Amp AM Features Ratings to 1000V PRV Surge overloadrating - 30/50 amperes peak Ideal for printed circuit board Reliable construction utilizing molded plastic

Contextual Info: Technical Data Sheet Specification SSC-AM101-H Rev 1.4, General SSC Drawn Approval Customer Approval SSCSSC-AM101AM101-H Rev.1.4 www.ZLED.com 서식번호 : SSC-QP-7-07-24 (Rev.0.0) Technical Data Sheet [ Contents ] 1. Features 2. Absolute maximum ratings

Contextual Info: Preliminary DC/DC Converter AM101-73 Features SOT-6 • Converts a Positive Voltage Into a Negative Voltage 0.074 1.90 mm REF. ■ Ideal for Providing Gate Voltage Bias for GaAs Products ■ Ultra Small SOT-6 Package ■ Only Three Capacitors Required as

AM1011-075

Contextual Info: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN

AM1011-400

Contextual Info: AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 400 W MIN. WITH 8.0 dB GAIN

Contextual Info: fT J SGS-THOMSON * 7 # . M §[ÄLI(gMi[](§S AM1011-500 RF & MICROWAVE TR AN SISTO RS AVIONICS APPLICATIONS P o u t = 500 W MIN. WITH 8.5 dB MIN. GAIN • 10:1 LOAD VSW R C A P A B ILIT Y @ 10^iS., 1% DUTY - ■ S IX P A C H ER M ETIC METALVCERAMIC PACKAGE

AM1011-500

Abstract: M198
Contextual Info: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION