ALL TRANSISTOR BOOK Search Results
ALL TRANSISTOR BOOK Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 |
|
NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
ALL TRANSISTOR BOOK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SC3554
Abstract: data transistor nec
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2sc3554d17970ej3v0ds00tc-1644ad17970ej3v0ds+1 | |
2SD1950
Abstract: C1987 NEC Systems
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2sd1950d17976ej3v0ds00tc-1894ad17976ej3v0ds+2 | |
2sc3618 application
Abstract: NEC diode nec transistor 2SC3618
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2sc3618d17971ej3v0ds00tc-1641ad17971ej3v0ds+3 | |
TC1628
Abstract: D1793 2SB1114 NEC Systems
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2sb1114d17936ej3v0ds00tc-1628ad17936ej3v0ds+3 | |
2SD1614
Abstract: NEC silicon epitaxial power transistor NEC Systems
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2sd1614d17973ej3v0ds00tc-1649ad17973ej3v0ds+2 | |
1115a
Abstract: D1794 2SB1115 1115A ics NEC Systems
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2sb1115d17940ej3v0ds00tc-1624ad17940ej3v0ds+4 | |
2SD1006Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics |
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2sd1006d17972ej4v0ds00tc-1369bd17972ej4v0ds | |
nec speed grade
Abstract: nec transistor 2SA1463
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2sa1463d17935ej3v0ds00tc-1889ad17935ej3v0ds+2 | |
2SC3617
Abstract: TC1640 NEC Systems
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2sc3617d17913ej3v0ds00tc-1640atc1640+1 | |
opto d213
Abstract: d213 opto MOCD213 T
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mocd213opto d213d213 optomocd213 t | |
D217 OPTO
Abstract: MOCD217 opto D217
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mocd217rs481ata-25d217 opto+1 | |
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Contextual Info: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units |
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ds2003snls394j | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
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OCR Scan |
108thmt11152n3303fpt100 phototransistor+7 | |
SNLS394JContextual Info: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units |
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ds2003snls394j | |
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all transistor book
Abstract: powerex igbt powerex diode
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all transistor bookpowerex igbtpowerex diode | |
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Contextual Info: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units |
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ds2003snls394j | |
MOC211Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC211 MOC212 M OC213 Sm all Outline O ptoisolators [CTR - 2 0 % Min] Transistor Output {CTR = 6 0 % Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, |
OCR Scan |
rs481ae54915moc212moc213+1 | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band. |
OCR Scan |
2sc3582 | |
5024X
Abstract: TPS65100
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tps65100slvs496tssop-24qfn-24+1 | |
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Contextual Info: TPS65140 www.ti.com SLVS497 – SEPTEMBER 2003 FEATURES DESCRIPTION • • • • The TPS65140 offers a very compact and small power supply solution to provide all three voltages required by thin film transistor TFT LCD display. The auxiliary linear regulator controller can be used to generate a 3.3 |
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tps65140slvs497tssop-24qfn-24 | |
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Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA805T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • S m all Feed-back C apacitance |
OCR Scan |
upa805t2sc4958ipa805tipa805t-t1 | |
lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
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x10679ejgv0sg00lg crt monitor circuit diagrammicro servo 9gsamsung lcd tv power supply diagrams+7 | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2802 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are |
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pa2802 | |
uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
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x10679ejfv0sg00upd3599transistor nec 2sk2396mos fet buz 444+7 | |