AJ RECTIFIER Search Results

Contextual Info: AJ ABRIDGED VERSION SSI 33P3733A jitim systems 8-26.5 Mbit/s Read Channel w/Pit Mark Pulse Qualifier A TDK Group/Company February 1996 DESCRIPTION • Wide bandwidth, high precision full-wave rectifier • Programmable LEVEL pin time constant with separate MO data and emboss registers

Contextual Info: ER 1A.ER IM Superschnelle Si-Gleichrichter für die Oberflächenmontage Superfast Switching Surface Mount Si-Rectifier 0.6 A Nominal current Nennstrom 1 i 1 ! Isfö o aj 1 1 1 I 1 » 1 ! 50.300 V Repetitive peak reverse voltage Periodische Spitzensperrspannung

2659N

Contextual Info: jmm a KmmJI ! aj m h I j m l jmmm SL^JI I European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2659 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides VWK July 1996 D 2659 N Electrical properties

vp22

Contextual Info: International Government and Space Products I8R Rectifier Control Integrated Circuits Part Number VS Offset VBS, VCC IOUT Supply Voltage Supply Voltage Sink. Source V (AJ •> (V| Fax on Demand Number High & Low Side Driver LCC I R 2 I I0 E 4 -4 t o 400

Contextual Info: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte

1809N

Contextual Info: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 1809 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte

Contextual Info: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5809 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte

Contextual Info: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 1069 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte

D34AC

Abstract: 70MT80KB 70MT120K 90MT100KB 70MT120KB 70MT160KB
Contextual Info: International lO R Rectifier Bridges 1FSM Part Number V RRM ' o @ TC V (A} (C) VF » @ I FM 50 H i (V) (A) (A) M H i R QK{DC) 'RM (A) (°C/W) Gl/AJ Notes Fax on Case Demand Outline Number Key Three-Phase 60MT100KB 1000 60 85 1.75 100 350 370 0.37 ? 8 ft

3fs 4a

Contextual Info: •Fast-Recovery Rectifier Diodes AjasoMe Maximum Rating î Type No. V rm 10 IrsM <V <AJ A) Î] r stg 1^) Vf <V> V{/<A> m a*1' max trrl «íftᣠmax trr2 (#iS) (Center-tap type) 0.6 30 600 RH 1Z + 150 1.35 10 4.0 m ax . Typ«»to. FMU-12S.R 200 -14S.R

Diode FAJ 32

Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
Contextual Info: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package

jrm 45

Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Contextual Info: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1

ST1900C

Abstract: t16 400 2900 29000 180s04p
Contextual Info: International IO R Rectifier Phase Control SCR v MtM/ Part Number ' tsm V DKM 1RMS V (A) l T(AV) @Tc (A) ro (b) % (a) (A) >61 ^ @ *T M dv/dt R0 J-HS (V) (Aj (V) (A) (V/ps) (°C/W) (A) Notes Fox on Case Demand Outline Number Key Thyristors A-36 (R-Puk) ST I9 0 0 C 4 5 R 0

4746a

Abstract: in 4746a
Contextual Info: ABRIDGED VERSION AJ SSI 32P4746/4746A d c n s y s k m Read Channel with 1,7 ENDEC, 4-burst Servo s A TDK Group/Company January 1996 DESCRIPTION FEATURES The SSI 32P4746/4746A devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a

mip 0253

Abstract: 33R3750
Contextual Info: ABRIDGED VERSION AJ sm m svskm s A TDK G ro u p /C o m p a n y SSI 33P3701 8-48 Mbit/s Magneto Optical Read Channel with PPM/PWM Pulse Qualification Advance Information February 1996 DESCRIPTION PULSE DETECTOR The SSI 33P3701 device is a high performance BiCMOS single chip read channel IC that contains all

CSTBT igbt

Contextual Info: CM100MXA-24S NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

Contextual Info: CM100MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

E86015

Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Contextual Info: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays

ZENER A19

Abstract: DIODE 1J DIODE A19 ZENER DIODES E-1
Contextual Info: ZY 1 . ZY 200 2W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 6 > + 5   <   Absolute Maximum Ratings Symbol Conditions Axial lead diode

30S3

Abstract: KS926S2 T760 T930
Contextual Info: KS926S2 5 a 'Ê Ê ± 'h W t > ÿ '( * — F : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER Features • ffi£2£pBp Surface mount device. • teVp Low V y Connection Diagram Super high speed switching. • y n m iM M it h « High reliability by planer design

RS2A

Contextual Info: 1.5A SURFACE MOUNT FAST RECOVERY RECTIFIER RS2A~RS2K 1.5A Surface Mount Fast Recovery Rectifier Features • • • • Low profile surface mounted package Fast recovery time for high efficiency Glass passivated junction Plastic package has underwriters laboratory

TB1010

Abstract: TB1010 bridge tb106 aj rectifier epoxy 5000 taitron TB1005 TB101 TB102 TB104 TB108
Contextual Info: SINGLE-PHASE BRIDGE RECTIFIER TB1005 ~ TB1010 10A Single-Phase Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds, 0.375" 9.5mm lead length,

1N40

Abstract: diode 1N40 datasheet diode 1n40 DO204AL 1N4001G 1N4007G DO-204AL
Contextual Info: 1.0A GENERAL PURPOSE SILICON RECTIFIER 1N4001G~1N4007G 1.0A General Purpose Silicon Rectifier Features • • • • • Glass passivated junction Low forward voltage drop Low leakage current High forward surge current capability High temperature soldering guaranteed 265°C/10 seconds