AI02132 Search Results

M28F102

Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)

M29F102B

Abstract: DQ15E M28F102 PLCC44 EA13 1mbitx16
Contextual Info: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

Contextual Info: £yj SGS-THOMSON D S IILI©DMIi!!lll©i M 29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical

M28F102

Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)

M28F102

Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

m29f1028

Abstract: M29F102B NE 555 SGS M28F102 PLCC44
Contextual Info: SCS-THOMSON M29F102B R}OD ®i[LI êïï®®liiDD(gS 1 Mbit (x16, Block Erase Single Supply Flash M em ory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10^is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

st m29F102bb DATASHEET

Abstract: M28F102 M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

M28F102

Abstract: M29F102BB PLCC44 0097h
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

M28F102

Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)

M28F102

Abstract: M29F102B PLCC44
Contextual Info: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits

Contextual Info: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: SGS-THOMSON M29F102B [M D M [iL [iO T M O (§ S 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10jis typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F102B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10ns typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: SGS-THOMSON M29F102B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIM IN ARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical

timer NE 555

Abstract: st m29F102bb M28F102 M29F102BB PLCC44 ICC32
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)