M28F102
Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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M29F102B
Abstract: DQ15E M28F102 PLCC44 EA13 1mbitx16
Contextual Info: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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m29f102bm28f1020020hai02131+6ai02132plcc44tsop40dq15eea131mbitx16
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Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical
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M28F102
Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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m29f102bbplcc44tsop40m28f102 |
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M28F102
Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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st m29F102bb DATASHEET
Abstract: M28F102 M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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M28F102
Abstract: M29F102BB PLCC44 0097h
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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M28F102
Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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M28F102
Abstract: M29F102B PLCC44
Contextual Info: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits
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m29f102bm28f1020020h0097h+1plcc44
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M28F102
Abstract: M29F102BB PLCC44 st m29F102bb
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical
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timer NE 555
Abstract: st m29F102bb M28F102 M29F102BB PLCC44 ICC32
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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m29f102bbplcc44tsop40timer ne 555+3st m29f102bbm28f102icc32
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